No. |
Part Name |
Description |
Manufacturer |
1 |
AS29LV400B-80SC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
2 |
AS29LV400B-80SI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
3 |
AS29LV400B-80TC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
4 |
AS29LV400B-80TI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
5 |
AS29LV800B-80SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
6 |
AS29LV800B-80SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
7 |
AS29LV800B-80TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
8 |
AS29LV800B-80TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
9 |
BCR20B-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
10 |
BT300B-800R |
Thyristors |
Philips |
11 |
BTA140B-800 |
Triacs |
Philips |
12 |
G1-200B-85-1.6 |
Processor Series Low Power Integrated x86 Solution |
National Semiconductor |
13 |
G1-300B-85-2.0 |
Processor Series Low Power Integrated x86 Solution |
National Semiconductor |
14 |
GL-180B-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
15 |
GL-200B-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
16 |
GM-180B-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
17 |
GM-200B-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
18 |
KMM594000B-8 |
4M x 9 CMOS DRAM SIMM Memory Module |
Samsung Electronic |
19 |
MAC800B-80 |
800V Triac (Thyristor) 4A RMS, sensitive gate |
Motorola |
20 |
MBM29LV160B-80 |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT |
Fujitsu Microelectronics |
21 |
MBM29LV160B-80PBT |
16M (2M x�� 8/1M x 16) BIT |
Fujitsu Microelectronics |
22 |
MBM29LV160B-80PBT-SF2 |
16M (2M x�� 8/1M x 16) BIT |
Fujitsu Microelectronics |
23 |
MBM29LV160B-80PCV |
16M (2M x�� 8/1M x 16) BIT |
Fujitsu Microelectronics |
24 |
MBM29LV160B-80PFNT |
CMOS 16M (2M x 8/1M x 16) bit |
Fujitsu Microelectronics |
25 |
MBM29LV160B-80PFTN |
16M (2M x�� 8/1M x 16) BIT |
Fujitsu Microelectronics |
26 |
MBM29LV160B-80PFTR |
CMOS 16M (2M x 8/1M x 16) bit |
Fujitsu Microelectronics |
27 |
MBM29LV160B-80PFTY |
16M (2M x�� 8/1M x 16) BIT |
Fujitsu Microelectronics |
28 |
MBM29LV160B-80PN |
16M (2M x�� 8/1M x 16) BIT |
Fujitsu Microelectronics |
29 |
MCR380B-80 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 380 Amperes RMS |
Motorola |
30 |
OR2T40B-8BA208 |
Field-Programmable Gate Arrays |
etc |
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