| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BMT1720B02 |
Silicon microwave power transistor. |
BOPOLARICS |
| 2 |
DS_S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 3 |
FR20B02 |
High Power Fast Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 4 |
FR30B02 |
High Power Fast Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 5 |
FR40B02 |
High Power Fast Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 6 |
FR70B02 |
High Power Fast Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 7 |
LMN200B02 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR |
Diodes |
| 8 |
S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 9 |
S1T2410B02-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 10 |
TS10B02G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| | | |
