| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AIM5D10B060M1 |
IPM5 Intelligent Power Modules |
Alpha & Omega Semiconductor |
| 2 |
BMT1720B06 |
Silicon microwave power transistor. |
BOPOLARICS |
| 3 |
FCQ20B06 |
SBD DUAL DIODES - CATHODE COMMON |
Nihon |
| 4 |
PP100B060 |
POW-R-PAK 100A / 600V H-Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 5 |
PP150B060 |
POW-R-PAK 150A / 600V H-Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 6 |
PP200B060 |
POW-R-PAK 200A / 600V H-Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 7 |
PP300B060 |
POW-R-PAK 300A / 600V H-Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 8 |
PP400B060 |
POW-R-PAK 400A / 600V H-Bridge IGBT Assembly |
Powerex Power Semiconductors |
| 9 |
T10B065 |
Glass passivated junction |
Littelfuse |
| 10 |
T10B065B |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 55V,max. Ir = 50uA @ Vr = 65V,max, Bulk (500pcs). |
Littelfuse |
| 11 |
T10B065T |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 55V,max. Ir = 50uA @ Vr = 65V,max, Tape and reeled (1500pcs). |
Littelfuse |
| 12 |
TPD1E10B06 |
Single Channel ESD in 0402 package with 10pF Capacitance and 6V Breakdown |
Texas Instruments |
| 13 |
TPD1E10B06DPYR |
Single-Channel ESD in 0402 Package With 10pF Capacitance and 6V Breakdown 2-X1SON -40 to 125 |
Texas Instruments |
| 14 |
TPD1E10B06DPYT |
Single-Channel ESD in 0402 Package With 10pF Capacitance and 6V Breakdown 2-X1SON -40 to 125 |
Texas Instruments |
| 15 |
TS10B06G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| | | |
