No. |
Part Name |
Description |
Manufacturer |
1 |
HYB3116400BJ-70 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
2 |
HYB3117400BJ-70 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
3 |
HYB314100BJ-70 |
4M x 1 Bit FPM DRAM 3.3 V 70 ns |
Infineon |
4 |
HYB314100BJ-70 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
5 |
HYB511000BJ-70 |
1 M x 1-Bit Dynamic RAM Low Power 1 M �� 1-Bit Dynamic RAM |
Siemens |
6 |
HYB5116400BJ-70 |
4M x 4-Bit Dynamic RAM |
Siemens |
7 |
HYB5117400BJ-70 |
4M x 4-Bit Dynamic RAM |
Siemens |
8 |
HYB5117400BJ-700 |
4M x 4bit DRAM |
Siemens |
9 |
HYB514400BJ-70 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
10 |
HYB514400BJ-70 |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
Siemens |
11 |
HYB514800BJ-70 |
512kx8-Bit Dynamic RAM |
Siemens |
12 |
KM416C1000BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
13 |
KM416C1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
14 |
KM416V1000BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
15 |
KM416V1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
16 |
TC514260BJ-70 |
70ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
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