| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FDB7030BLS |
30V N-Channel PowerTrench SyncFET |
Fairchild Semiconductor |
| 2 |
FDP7030BLS |
30V N-Channel PowerTrench SyncFET TM |
Fairchild Semiconductor |
| 3 |
HM514400BLS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
| 4 |
HM514400BLS-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 5 |
HM514400BLS-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
| 6 |
ISL9N7030BLS3ST |
30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET� Trench Power MOSFETs |
Fairchild Semiconductor |
| 7 |
MRF18030BLSR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 8 |
MRF18060B |
MRF18060B, MRF18060BR3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 9 |
MRF18060BLSR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 10 |
MRF18060BLSR3 |
RF Power Field Effect Transistors |
Motorola |
| | | |
