No. |
Part Name |
Description |
Manufacturer |
1 |
HY57V651620BTC-10 |
4 Banks x 1M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
2 |
HY57V651620BTC-10P |
4 Banks x 1M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
3 |
HY57V651620BTC-10S |
4 Banks x 1M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
4 |
HY57V653220BTC-10 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
5 |
HY57V653220BTC-10P |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
6 |
HY57V658020BTC-10 |
4 Banks x 2M x 8Bit Synchronous DRAM |
Hynix Semiconductor |
7 |
HY57V658020BTC-10P |
4 Banks x 2M x 8Bit Synchronous DRAM |
Hynix Semiconductor |
8 |
HY57V658020BTC-10S |
4 Banks x 2M x 8Bit Synchronous DRAM |
Hynix Semiconductor |
9 |
HY57V658020BTC-10SI |
4Mbit x 2 bank x 8 SDRAM, LVTTL, 100MHz |
Hynix Semiconductor |
10 |
MX26C1000BTC-10 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
11 |
MX26C1000BTC-12 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
12 |
MX26C1000BTC-15 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
13 |
MX26C2000BTC-10 |
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
14 |
MX26C2000BTC-12 |
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
15 |
MX26C2000BTC-15 |
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
16 |
MX26C4000BTC-10 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
17 |
MX26C4000BTC-12 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
18 |
MX26C4000BTC-15 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM |
Macronix International |
19 |
MX28F2100BTC-12 |
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY |
Macronix International |
20 |
MX29F200BTC-12 |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY |
Macronix International |
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