| No. |
Part Name |
Description |
Manufacturer |
| 1 |
COP820CJ-XXX/N |
8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector |
National Semiconductor |
| 2 |
COP820CJ-XXX/WM |
8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector |
National Semiconductor |
| 3 |
GM71C17400CJ-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns |
Hynix Semiconductor |
| 4 |
GM71C17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
| 5 |
GM71C17400CJ-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns |
Hynix Semiconductor |
| 6 |
GM71C17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
| 7 |
GM71C17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
| 8 |
GM71C17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
| 9 |
GM71CS17400CJ-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns |
Hynix Semiconductor |
| 10 |
GM71CS17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
| 11 |
GM71CS17400CJ-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns |
Hynix Semiconductor |
| 12 |
GM71CS17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
| 13 |
GM71CS17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
| 14 |
GM71CS17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
| 15 |
HM514260CJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 16 |
HM514260CJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 17 |
HM514260CJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 18 |
HM514260CJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 19 |
HM514800CJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 20 |
HM514800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 21 |
HM514800CJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 22 |
HM51S4260CJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 23 |
HM51S4260CJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 24 |
HM51S4260CJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 25 |
HM51S4260CJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 26 |
HM51S4800CJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 27 |
HM51S4800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 28 |
HM51S4800CJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 29 |
KM416C1000CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 30 |
KM416C1000CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| | | |
