| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GM71C17400CT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
| 2 |
GM71C17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
| 3 |
GM71CS17400CT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
| 4 |
GM71CS17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
| 5 |
HY57V643220CT-6 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
| 6 |
HYB25D128160CT-6 |
128Mbit Double Data Rate (DDR) Components |
Infineon |
| 7 |
HYB25D128800CT-6 |
128 Mbit Double Data Rate SDRAM |
Infineon |
| 8 |
HYB25D256160CT-6 |
256Mbit Double Data Rate (DDR) Components |
Infineon |
| 9 |
HYB25D256800CT-6 |
256Mbit Double Data Rate (DDR) Components |
Infineon |
| 10 |
HYB39S16160CT-6 |
SDRAM 1M x 16 Bit |
Infineon |
| 11 |
HYB39S16160CT-6 |
1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications |
Siemens |
| 12 |
KM416C1000CT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 13 |
KM416C1200CT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 14 |
KM416V1000CT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 15 |
KM416V1200CT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| | | |
