| No. |
Part Name |
Description |
Manufacturer |
| 1 |
60CTT015 |
15V 60A Trench Schottky Discrete Diode in a TO-220 package |
International Rectifier |
| 2 |
60CTTN015 |
15V 60A Trench Schottky Discrete Diode in a TO-220 package |
International Rectifier |
| 3 |
FQPF5N50CTTU |
500V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 4 |
HM514260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 5 |
HM514260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 6 |
HM514260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 7 |
HM514260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8 |
HM514400CTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
| 9 |
HM514400CTT-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 10 |
HM514400CTT-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
| 11 |
HM514800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 12 |
HM514800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 13 |
HM514800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 14 |
HM51S4260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 15 |
HM51S4260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 16 |
HM51S4260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 17 |
HM51S4260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 18 |
HM51S4800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 19 |
HM51S4800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 20 |
HM51S4800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 21 |
KS24C020CTTF |
256 x 8-bit serial EEPROM |
Samsung Electronic |
| 22 |
M28R400CTT120ZB1T |
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 23 |
M28R400CTT120ZB1T |
4 Mbit (256Kb x16/ Boot Block) 1.8V Supply Flash Memory |
ST Microelectronics |
| 24 |
M28R400CTT120ZB6T |
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 25 |
M28R400CTT120ZB6T |
4 Mbit (256Kb x16/ Boot Block) 1.8V Supply Flash Memory |
ST Microelectronics |
| 26 |
M28R400CTT90ZB1T |
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 27 |
M28R400CTT90ZB1T |
4 Mbit (256Kb x16/ Boot Block) 1.8V Supply Flash Memory |
ST Microelectronics |
| 28 |
M28R400CTT90ZB6T |
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 29 |
M28R400CTT90ZB6T |
4 Mbit (256Kb x16/ Boot Block) 1.8V Supply Flash Memory |
ST Microelectronics |
| 30 |
MBRB20100CTT4 |
20A 100V Schottky Rectifier |
ON Semiconductor |
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