| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10D112K |
VARISTOR |
Ceramate |
| 2 |
20D112K |
VARISTOR |
Ceramate |
| 3 |
20D112K |
VARISTOR |
Ceramate |
| 4 |
ERZV10D112 |
Surge Absorbers - Varistor Type D Series V |
Panasonic |
| 5 |
ERZV10D112C1 |
Surge Absorbers - Varistor Type D Series V |
Panasonic |
| 6 |
ERZV20D112 |
Surge Absorbers - Varistor Type D Series V |
Panasonic |
| 7 |
GNR10D112K |
Varistor. |
Ceramate |
| 8 |
GNR20D112K |
Varistor. |
Ceramate |
| 9 |
GNR40D112K |
Varistor. |
Ceramate |
| 10 |
M28R400CB120D11 |
KNOWN GOOD DIE 4 MBIT (256KB X16) 1.8V SUPPLY FLASH MEMORY |
ST Microelectronics |
| 11 |
MDE-10D112K |
1100V; max peak current:3500A; metal oxide varistor. Standard D series 10mm disc |
MDE Semiconductor |
| 12 |
MDE-20D112K |
Metal Oxide Varistors |
etc |
| 13 |
MDE-20D112K |
1100V; max peak current:75000A; metal oxide varistor. Standard D series 20mm disc |
MDE Semiconductor |
| 14 |
MDE-40D112K |
1100V; max peak current:40000A; metal oxide varistor. High energy series 40mm single disc |
MDE Semiconductor |
| 15 |
NFV10D112K |
Varistor. |
Ceramate |
| 16 |
NFV20D112K |
Varistor |
Ceramate |
| 17 |
S524C20D11 |
1K/2K/4K/8K-bit Serial EEPROM |
Samsung Electronic |
| 18 |
S524C20D11 S524C20D21 S524C80D41 S524C80 |
1K/2K/4K/8K-bit Serial EEPROM Data Sheet |
Samsung Electronic |
| 19 |
SF30D11 |
Silicon diffused junction thyristor 30A 200V |
TOSHIBA |
| 20 |
SF80D11 |
Silicon alloy-diffused junction thyristor 80A 200V |
TOSHIBA |
| 21 |
SH150D11 |
Silicon alloy-diffused junction high speed thyristor 150A 200V |
TOSHIBA |
| 22 |
SH300D11 |
Silicon alloy-diffused junction high speed thyristor 300A 200V |
TOSHIBA |
| 23 |
SH30D11 |
Silicon alloy-diffused junction high speed thyristor 30A 200V |
TOSHIBA |
| 24 |
SH50D11 |
Silicon alloy-diffused junction high speed thyristor 50A 200V |
TOSHIBA |
| 25 |
SH80D11 |
Silicon alloy-diffused junction high speed thyristor 100A 200V |
TOSHIBA |
| | | |
