No. |
Part Name |
Description |
Manufacturer |
1 |
1032-60LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
2 |
1032E-70LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
3 |
HM62V16100LTI-4 |
Wide Temperature Range Version |
Hitachi Semiconductor |
4 |
HM62V16100LTI-4 |
Memory>Low Power SRAM |
Renesas |
5 |
HM62V16100LTI-4SL |
Wide Temperature Range Version |
Hitachi Semiconductor |
6 |
HM62V16100LTI-4SL |
Memory>Low Power SRAM |
Renesas |
7 |
HM62V16100LTI-5SL |
Wide Temperature Range Version |
Hitachi Semiconductor |
8 |
HM62V16100LTI-5SL |
Memory>Low Power SRAM |
Renesas |
9 |
HM62V16100LTI-XX |
Low Power SRAMs |
Hitachi Semiconductor |
10 |
ISPL1048E-100LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
11 |
ISPL1048E-50LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
12 |
ISPL1048E-70LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
13 |
ISPL1048E-90LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
14 |
ISPLSI1032-60LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
15 |
ISPLSI1032E-70LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
16 |
KM684000LTI-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
17 |
KM684000LTI-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
18 |
KM684000LTI-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
19 |
KM684000LTI-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
20 |
KM684000LTI-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
21 |
KM684000LTI-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
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