| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AN80M30RSP |
General-Purpose Linear IC - Voltage Regulater - Low Drop Regulater with standby |
Panasonic |
| 2 |
APT10M30AVR |
POWER MOS V 100V 65A 0.030 Ohm |
Advanced Power Technology |
| 3 |
APT30M30B2FLLG |
FREDFETs |
Microsemi |
| 4 |
APT30M30B2LL |
POWER MOS 7 300V 100A 0.030 Ohm |
Advanced Power Technology |
| 5 |
APT30M30JFLL |
FREDFETs |
Microsemi |
| 6 |
APT30M30JLL |
POWER MOS 7 300V 88A 0.030 Ohm |
Advanced Power Technology |
| 7 |
APT30M30JLL |
MOSFET |
Microsemi |
| 8 |
APT30M30LFLLG |
FREDFETs |
Microsemi |
| 9 |
APT30M30LLL |
POWER MOS 7 300V 100A 0.030 Ohm |
Advanced Power Technology |
| 10 |
FU-68PDF-510M30B |
1.55 um DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 11 |
FU-68PDF-520M30B |
1.55 um DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 12 |
FU-68PDF-V510M30B |
Wavelength:1537nm DFB-LD module with polarization maintaining fiber pigtail |
Mitsubishi Electric Corporation |
| 13 |
GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 14 |
GT60M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 15 |
GT60M302 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 16 |
GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 17 |
LDK120M30R |
200 mA low quiescent current very low noise LDO |
ST Microelectronics |
| 18 |
LDK220M30R |
200 mA low quiescent current and low noise LDO |
ST Microelectronics |
| | | |
