No. |
Part Name |
Description |
Manufacturer |
1 |
0105-125 |
500MHz 28V 100W NPN RF power transistor for wideband VHF-UHF class C applications |
SGS Thomson Microelectronics |
2 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
3 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
4 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
5 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
6 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
7 |
2N3904-T18 |
40V Vce, 0.2A Ic, 300MHz NPN bipolar transistor |
SemeLAB |
8 |
2N3926 |
RF NPN Transistor 130...230MHZ FM mobile applications |
SGS Thomson Microelectronics |
9 |
2N3927 |
RF NPN Transistor 130...230MHZ FM mobile applications |
SGS Thomson Microelectronics |
10 |
2N5090 |
NPN silicon RF Power Transistor, 1.2W Output Minimum at 400MHz (7.8 dB Gain) |
Motorola |
11 |
2N5646 |
NPN silicon RF power UHF transistor 12W, specified 12.5V 470MHz characteristics |
Motorola |
12 |
2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor |
SemeLAB |
13 |
2N5846 |
50MHz RF power silicon NPN transistor |
Motorola |
14 |
2N5942 |
NPN silicon RF power transistor 30MHz 80W (PEP) |
Motorola |
15 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
16 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
17 |
2N6136 |
NPN silicon RF power transistor 25W - 470MHz designed for 12.5V |
Motorola |
18 |
2N6256 |
NPN silicon RF Power transistor 0.5W 470MHz 12.5V |
Motorola |
19 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
20 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
21 |
2N6986 |
100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
22 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
23 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
24 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
25 |
2SC1763 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 40W power, 28V supply voltage |
TOSHIBA |
26 |
2SC1764 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 80W power, 28V supply voltage |
TOSHIBA |
27 |
2SC2098 |
Silicon NPN epitaxial planar transistor, Citizen band and HAM band up to 50MHz RF power amplifier applications |
TOSHIBA |
28 |
2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
29 |
2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
30 |
2SC2395 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
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