| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HGTH20N50E1 |
15A/ 20A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 2 |
HGTH20N50E1D |
20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 3 |
HGTP10N50E1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 4 |
HGTP10N50E1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 5 |
MTE30N50E |
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM |
Motorola |
| 6 |
MTV20N50E |
TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM |
Motorola |
| 7 |
MTV20N50E |
20 Amp D3PAK Surface Mount Products, N-Channel, VDSS 500 |
ON Semiconductor |
| 8 |
MTV20N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 9 |
MTW20N50E |
TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
Motorola |
| 10 |
MTW20N50E |
OBSOLETE - Power MOSFET 20 Amps, 500 Volts |
ON Semiconductor |
| 11 |
MTW20N50E-D |
Power MOSFET 20 Amps, 500 Volts N-Channel TO-247 |
ON Semiconductor |
| 12 |
MTY20N50E |
Power MOSFET 20 Amps, 500 Volts |
ON Semiconductor |
| 13 |
MTY20N50E-D |
Power MOSFET 20 Amps, 500 Volts |
ON Semiconductor |
| 14 |
MTY30N50E |
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
Motorola |
| 15 |
MTY30N50E |
OBSOLETE - Power MOSFET 30 Amps, 500 Volts |
ON Semiconductor |
| 16 |
MTY30N50E-D |
Power MOSFET 30 Amps, 500 Volts N-Channel TO-264 |
ON Semiconductor |
| 17 |
PHW20N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
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