| No. |
Part Name |
Description |
Manufacturer |
| 1 |
489D106X050N65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 2 |
489D156X050N65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 3 |
489D226X050N65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 4 |
489D685X050N65V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 5 |
AOT10N65 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 6 |
AOTF10N65 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 7 |
AOW10N65 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 8 |
AOWF10N65 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 9 |
FCP190N65F |
N-Channel SuperFET� II FRFET� MOSFET |
Fairchild Semiconductor |
| 10 |
FGA30N65SMD |
650V, 30A, Field Stop IGBT |
Fairchild Semiconductor |
| 11 |
FGA40N65SMD |
650V, 40A, Field Stop IGBT |
Fairchild Semiconductor |
| 12 |
FGA60N65SMD |
650V, 60A, Field Stop IGBT |
Fairchild Semiconductor |
| 13 |
FGH40N65UFD |
650V, 40A, Field Stop IGBT |
Fairchild Semiconductor |
| 14 |
KF10N65F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 15 |
KGF40N65KDC |
IGBT |
Korea Electronics (KEC) |
| 16 |
SPA20N65C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 17 |
SPI20N65C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 18 |
SPP20N65C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 19 |
STB10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 20 |
STB20N65M5 |
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 21 |
STB30N65M5 |
N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET D2PAK |
ST Microelectronics |
| 22 |
STF10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 23 |
STF10N65K3(045Y) |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP narrow leads package |
ST Microelectronics |
| 24 |
STF20N65M5 |
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in TO-220FP package |
ST Microelectronics |
| 25 |
STF30N65M5 |
N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-220FP |
ST Microelectronics |
| 26 |
STFI10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 27 |
STFI20N65M5 |
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 28 |
STI20N65M5 |
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in I2PAK package |
ST Microelectronics |
| 29 |
STP10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 30 |
STP20N65M5 |
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
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