No. |
Part Name |
Description |
Manufacturer |
1 |
MSP430F2410TPM |
16-bit Ultra-Low-Power Microcontroller, 56KB Flash, 4KB RAM, 12-Bit ADC, 2 USCIs, HW Multiplier 64-LQFP -40 to 105 |
Texas Instruments |
2 |
MSP430F2410TPMR |
16-bit Ultra-Low-Power Microcontroller, 56KB Flash, 4KB RAM, 12-Bit ADC, 2 USCIs, HW Multiplier 64-LQFP -40 to 105 |
Texas Instruments |
3 |
RM20TPM-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4 |
RM20TPM-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5 |
RM20TPM-24 |
Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts) |
Powerex Power Semiconductors |
6 |
RM20TPM-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
7 |
RM20TPM-2H |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
8 |
RM20TPM-2H |
Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts) |
Powerex Power Semiconductors |
9 |
RM20TPM-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
10 |
RM20TPM-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
11 |
RM20TPM-H |
Three-Phase Diode Bridge Modules (40 Amperes/800 Volts) |
Powerex Power Semiconductors |
12 |
RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
13 |
RM20TPM-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
14 |
RM30TPM-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
15 |
RM30TPM-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
16 |
RM30TPM-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
17 |
RM30TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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