No. |
Part Name |
Description |
Manufacturer |
1 |
2N5294 |
Silicon N-P-N transistor. 80V, 36W. |
General Electric Solid State |
2 |
2N5296 |
Silicon N-P-N transistor. 60V, 36W. |
General Electric Solid State |
3 |
2N5298 |
Silicon N-P-N transistor. 80V, 36W. |
General Electric Solid State |
4 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
5 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
6 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
7 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
8 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
9 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
10 |
2SC5245A |
RF Transistor, 10V, 30mA, fT=8GHz, NPN Single MCP |
ON Semiconductor |
11 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
12 |
2SC6097 |
Bipolar Transistor, 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
13 |
2SJ553STR |
P-channel MOSFET for high speed power switching, 60V, 30A |
Renesas |
14 |
2SK241GR |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
15 |
2SK241O |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
16 |
2SK241Y |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
17 |
2SK3703 |
N-Channel Power MOSFET, 60V, 30A, 26mOhm, TO-220F-3SG |
ON Semiconductor |
18 |
APT10026L2FL |
1000V, 38A power MOS 7 transistor |
Advanced Power Technology |
19 |
ATP201 |
N-Channel Power MOSFET, 30V, 35A, 17mOhm, Single ATPAK |
ON Semiconductor |
20 |
ATP212 |
N-Channel Power MOSFET, 60V, 35A, 23mOhm, Single ATPAK |
ON Semiconductor |
21 |
ATP216 |
N-Channel Power MOSFET, 50V, 35A, 23mOhm, Single ATPAK |
ON Semiconductor |
22 |
BD240A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. |
General Electric Solid State |
23 |
BD240B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. |
General Electric Solid State |
24 |
BSS138N |
Low Voltage MOSFETs - SOT23, 60V, 3.5Ohm, 0.23A |
Infineon |
25 |
BSS138W |
Low Voltage MOSFETs - SOT323, 60V, 3.5Ohm, 0.28A |
Infineon |
26 |
BU204 |
NPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 2.5Amp, 1300V, 36Watt. |
USHA India LTD |
27 |
CAS325M12HM2 |
1200V, 325A, Silicon Carbide High-Performance 62 mm Half-Bridge Module |
Wolfspeed |
28 |
CD411630 |
1600V, 30A general purpose dual diode |
Powerex Power Semiconductors |
29 |
CMM1530-LC |
1.85 to 1.91 GHz 3.0V, 30 dBm, PCS/PCN LCC-8 Power Amplifier |
CELERITEK |
30 |
CMM1530-LC-00S0 |
1.85 to 1.91 GHz 3.0V, 30 dBm, PCS/PCN LCC-8 Power Amplifier |
CELERITEK |
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