| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 2 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 3 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 5 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 6 |
2N6274 |
50A silicon 250W high-power, NPN transistor |
Motorola |
| 7 |
2N6275 |
50A silicon 250W high-power, NPN transistor |
Motorola |
| 8 |
2N6276 |
50A silicon 250W high-power, NPN transistor |
Motorola |
| 9 |
2N6277 |
50A silicon 250W high-power, NPN transistor |
Motorola |
| 10 |
2N6338 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 11 |
2N6339 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 12 |
2N6340 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 13 |
2N6341 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 14 |
2SC1030 |
Silicon Transistor NPN Triple Diffused, 20~30W Hi Fi Output |
Hitachi Semiconductor |
| 15 |
2SC897 |
Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output |
Hitachi Semiconductor |
| 16 |
AGB3306S24Q1 |
50W High Linearity Low Noise Wideband Gain Block |
Anadigics Inc |
| 17 |
AN826 |
250W HIGH POWER FACTOR SUPPLY FOR TV |
SGS Thomson Microelectronics |
| 18 |
AN827 |
A 500W HIGH POWER FACTOR WITH THE L4981A CONTINUES MODE IC |
SGS Thomson Microelectronics |
| 19 |
BD313 |
10A complementary silicon 150W high-power NPN transistor 80V 150W |
Motorola |
| 20 |
BD314 |
10A complementary silicon 150W high-power PNP transistor 80V 150W |
Motorola |
| 21 |
BF370R |
0.500W High Voltage NPN Plastic Leaded Transistor. 15V Vceo, 0.100A Ic, 40 hFE. |
Continental Device India Limited |
| 22 |
BF420 |
0.800W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 23 |
BF421 |
0.800W High Voltage PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 24 |
BF422 |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 25 |
BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 26 |
BF423 |
0.800W High Voltage PNP Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 27 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 28 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 29 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 30 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| | | |
