No. |
Part Name |
Description |
Manufacturer |
1 |
1N2804 |
Zener diode. Nom zener voltage 6.8V. 50W. |
Motorola |
2 |
1N3305 |
Zener diode. Nom zener voltage 6.8V. 50W. |
Motorola |
3 |
1N4564 |
Zener diode. Nom zener voltage 7.5V. 50W. |
Motorola |
4 |
2N3773 |
High voltage, high power transistor. 160V, 150W. |
General Electric Solid State |
5 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
6 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
7 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
8 |
2N4347 |
High voltage silicon N-P-N transistor. 140V, 100W. |
General Electric Solid State |
9 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
10 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
11 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
12 |
2N5490 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
13 |
2N5491 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
14 |
2N5492 |
Silicon N-P-N VERSAWATT transistor. 75V, 50W. |
General Electric Solid State |
15 |
2N5493 |
Silicon N-P-N VERSAWATT transistor. 75V, 50W. |
General Electric Solid State |
16 |
2N5494 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
17 |
2N5495 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
18 |
2N5496 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
19 |
2N5497 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
20 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
21 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
22 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
23 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
24 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
25 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
26 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
27 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
28 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
29 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
30 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
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