| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3826 |
Zener regulator diode. Nom zener voltage 5.1 V. 1 W. |
Motorola |
| 2 |
1N4568A |
Low-level temperature-compensated zener reference diode. Max voltage 0.001 V. |
Motorola |
| 3 |
1N4733 |
1 W silicon zener diode. Nominal zener voltage 5.1 V. |
Fairchild Semiconductor |
| 4 |
1N4739 |
1 W silicon zener diode. Nominal zener voltage 9.1 V. |
Fairchild Semiconductor |
| 5 |
1N4765A |
Low-level temperature-compensated zener reference diode. Max voltage 0.141 V. |
Motorola |
| 6 |
1N4770A |
Low-level temperature-compensated zener reference diode. Max voltage 0.141 V. |
Motorola |
| 7 |
1N5231 |
500 mW silicon zener diode. Nominal zener voltage 5.1 V. |
Fairchild Semiconductor |
| 8 |
1N5231AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. Tolerance +-10%. |
Microsemi |
| 9 |
1N5231BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. Tolerance +-5%. |
Microsemi |
| 10 |
1N5231UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. |
Microsemi |
| 11 |
1N5239 |
500 mW silicon zener diode. Nominal zener voltage 9.1 V. |
Fairchild Semiconductor |
| 12 |
1N5239AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-10%. |
Microsemi |
| 13 |
1N5239BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-5%. |
Microsemi |
| 14 |
1N5239UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. |
Microsemi |
| 15 |
1N5241AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 11 V. Tolerance +-10%. |
Microsemi |
| 16 |
1N5241BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 11 V. Tolerance +-5%. |
Microsemi |
| 17 |
1N5241UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 11 V. |
Microsemi |
| 18 |
1N5262AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 51 V. Tolerance +-10%. |
Microsemi |
| 19 |
1N5262BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 51 V. Tolerance +-5%. |
Microsemi |
| 20 |
1N5262UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 51 V. |
Microsemi |
| 21 |
1N5270AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 91 V. Tolerance +-10%. |
Microsemi |
| 22 |
1N5270BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 91 V. Tolerance +-5%. |
Microsemi |
| 23 |
1N5270UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 91 V. |
Microsemi |
| 24 |
1N5523A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 25 |
1N5523B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 26 |
1N5523C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 27 |
1N5529A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 28 |
1N5529B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 29 |
1N5529C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 30 |
1N5942 |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| | | |
