| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1,25AND1,0625GBD,LC,2X5,E |
Transceivers by Form-factor MSA - Mulltimode 850nm -40C to 85C |
Infineon |
| 2 |
1,25GBIT/S,SC,1X9,3.3&5V |
Transceivers by Form-factor MSA - Product Type |
Infineon |
| 3 |
2SB1101 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 4 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 5 |
2SC2591 |
AF Driver,High Power Amplifier Amplifier Complementary Pair with 2SA1111,2SA1112 |
Unknow |
| 6 |
2SC2592 |
AF Driver,High Power Amplifier Amplifier Complementary Pair with 2SA1111,2SA1112 |
Unknow |
| 7 |
2SC2592 |
AF Driver,High Power Amplifier Amplifier Complementary Pair with 2SA1111,2SA1112 |
Unknow |
| 8 |
AMC001CFLKA-150 |
1,2,4 or 10 megabyte 5.0 volt-only flash memory PC card |
Advanced Micro Devices |
| 9 |
AMC002CFLKA-150 |
1,2,4 or 10 megabyte 5.0 volt-only flash memory PC card |
Advanced Micro Devices |
| 10 |
AMC004CFLKA-150 |
1,2,4 or 10 megabyte 5.0 volt-only flash memory PC card |
Advanced Micro Devices |
| 11 |
AMC010CFLKA-150 |
1,2,4 or 10 megabyte 5.0 volt-only flash memory PC card |
Advanced Micro Devices |
| 12 |
CM1213A |
ESD Protection Array, Low Capacitance, 1,2 and 4-Channel |
ON Semiconductor |
| 13 |
CSPESD302 |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
| 14 |
CSPESD302G |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
| 15 |
CSPESD303 |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
| 16 |
CSPESD303G |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
| 17 |
GBE1300NMSFPTRX1,25G |
Transceivers by Form-factor MSA - SFP - Single Mode 1300 nm, 1.25GBit/s GBE, 1.0625 GBit/s FC, LC, 10 km, 3.3V |
Infineon |
| 18 |
HN29V25611A |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
Renesas |
| 19 |
M4189 |
Number of frames: 1,2,4(a,b),8; exposure time:50ns to 1ms; framing unit |
Hamamatsu Corporation |
| 20 |
M5M29F25611VP |
MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
Mitsubishi Electric Corporation |
| 21 |
MF601G2-02AJ |
1,219,534,848 bytes (memory) flash drive |
Mitsubishi Electric Corporation |
| 22 |
MH16D72AKLB-10 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 23 |
MH16D72AKLB-10 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 24 |
MH16D72AKLB-75 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 25 |
MH16D72AKLB-75 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 26 |
MH16S72APHB-6 |
1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 27 |
MH16S72APHB-7 |
1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 28 |
MH16S72APHB-8 |
1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 29 |
MH16S72AVJB-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 30 |
MH16S72BAMD-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
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