| No. |
Part Name |
Description |
Manufacturer |
| 1 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
| 2 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 3 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 4 |
1513-22.5Y |
Delay 22.5 +/-1.2 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 5 |
1514-22.5Y |
Delay 22.5 +/-1.2 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 6 |
1K2S-N003 |
Input voltage 200-260 VAC;output voltage 3.3 VDC;output current:180 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 7 |
1K2S-N005 |
Input voltage 200-260 VAC;output voltage 5 VDC;output current:180 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 8 |
1K2S-N012 |
Input voltage 200-260 VAC;output voltage 12 VDC;output current:100 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 9 |
1K2S-N015 |
Input voltage 200-260 VAC;output voltage 15 VDC;output current:80 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 10 |
1K2S-N024 |
Input voltage 200-260 VAC;output voltage 24 VDC;output current:50 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 11 |
1K2S-N048 |
Input voltage 200-260 VAC;output voltage 48 VDC;output current:25 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 12 |
1KAB-E |
1.2 amp rectifier bridge |
International Rectifier |
| 13 |
1N5924 |
1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 14 |
1N5924A |
1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 15 |
1N5924C |
1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 16 |
1N5924D |
1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 17 |
1N5927 |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 18 |
1N5927A |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 19 |
1N5927C |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 20 |
1N5927D |
1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 21 |
1SG1887 |
1.2 AMPS GENERAL PURPOSE PLASTIC RECTIFIERS VOLTAGE RANGE 100 TO 600 VOLTS FOWARD CURRENT 1.2 AMPERES |
SynSemi Semiconductor |
| 22 |
1SG1887 |
1.2 AMPS GENERAL PURPOSE PLASTIC RECTIFIERS VOLTAGE RANGE 100 TO 600 VOLTS FOWARD CURRENT 1.2 AMPERES |
SynSemi Semiconductor |
| 23 |
1SG1888 |
1.2 AMPS GENERAL PURPOSE PLASTIC RECTIFIERS VOLTAGE RANGE 100 TO 600 VOLTS FOWARD CURRENT 1.2 AMPERES |
SynSemi Semiconductor |
| 24 |
1SG1888 |
1.2 AMPS GENERAL PURPOSE PLASTIC RECTIFIERS VOLTAGE RANGE 100 TO 600 VOLTS FOWARD CURRENT 1.2 AMPERES |
SynSemi Semiconductor |
| 25 |
5962-1120602 |
30W Total Output Power 5 Vin +1.2 Vout Single DC-DC Radiation Hardened Converter in a SBB Package. |
International Rectifier |
| 26 |
5962-9855001QXA |
PLLatinum 1.2 GHz Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 27 |
A-3570E |
1.2 INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
| 28 |
A-3570G |
1.2 INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
| 29 |
A-3570H |
1.2 INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
| 30 |
A-3570SR |
1.2 INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
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