No. |
Part Name |
Description |
Manufacturer |
1 |
FSL9230D |
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
2 |
FSL9230D1 |
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
3 |
FSL9230D3 |
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
4 |
FSL9230R |
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
5 |
FSL9230R1 |
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
6 |
FSL9230R3 |
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
7 |
FSL9230R4 |
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
8 |
MAX1963EZT150-T |
1.50 V, low-input-voltage, 300 mA LDO regulator with RESET |
MAXIM - Dallas Semiconductor |
9 |
MAX1976EZT150-T |
1.50 V, low-input-voltage, 300 mA LDO regulator with RESET |
MAXIM - Dallas Semiconductor |
10 |
NX8562LB654-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1565.49 nm. Frequency 191.50 THz. Anode ground. FC-PC connector. |
NEC |
11 |
NX8562LF654-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1565.49 nm. Frequency 191.50 THz. Anode floating. FC-PC connector. |
NEC |
12 |
NX8563LB654-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1565.49 nm. Frequency 191.50 THz. FC-PC connector. Anode ground. |
NEC |
13 |
NX8563LF654-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1565.49 nm. Frequency 191.50 THz. FC-PC connector. Anode floating. |
NEC |
14 |
VTS2081 |
Process photodiode. Isc = 1.50 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
15 |
VTS3081 |
Process photodiode. Isc = 1.50 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
16 |
VTS3181 |
Process photodiode. Isc = 1.50 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
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