| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N2896 |
1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. |
Continental Device India Limited |
| 2 |
30R090 |
Resettable PTC. Ihold = 0.90A, Itrip = 1.80A, Vmax =30Vdc. Reel quantity 3000. |
Littelfuse |
| 3 |
AWB7122 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 4 |
AWB7122P7 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 5 |
AWB7122P8 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 6 |
AWB7122P9 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 7 |
AWB7222 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 8 |
AWB7222P7 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 9 |
AWB7222P8 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 10 |
AWB7222P9 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 11 |
BSP316P |
Low Voltage MOSFETs - Small Signal MOSFET, -100V, SOT-223, RDSon =1.80 |
Infineon |
| 12 |
BUZ76 |
3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET |
Intersil |
| 13 |
IRF720 |
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 14 |
IRF720 |
3.3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET |
Intersil |
| 15 |
IRFD320 |
0.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET |
Intersil |
| 16 |
IRFF320 |
2.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET |
Intersil |
| 17 |
IRFR320 |
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs |
Intersil |
| 18 |
IRFU320 |
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs |
Intersil |
| 19 |
MAS9164AGA4-T |
50 mA LDO voltage regulator IC. 1.80 V. |
mas MICRO ANALOG SYSTEMS |
| 20 |
MAX1963EZT180-T |
1.80 V, low-input-voltage, 300 mA LDO regulator with RESET |
MAXIM - Dallas Semiconductor |
| 21 |
MAX1976EZT180-T |
1.80 V, low-input-voltage, 300 mA LDO regulator with RESET |
MAXIM - Dallas Semiconductor |
| 22 |
MAX6168AESA |
1.800 V, precision, micropower, low-dropout, high-output-current, SO-8 voltage reference |
MAXIM - Dallas Semiconductor |
| 23 |
MAX6168BESA |
1.800 V, precision, micropower, low-dropout, high-output-current, SO-8 voltage reference |
MAXIM - Dallas Semiconductor |
| 24 |
MD59-0049 |
PCS CDMA LNA/Downconverter 1.80-2.0 GHz |
Tyco Electronics |
| 25 |
MD59-0049RTR |
PCS CDMA LNA/Downconverter 1.80-2.0 GHz |
Tyco Electronics |
| 26 |
MD59-0049TR |
PCS CDMA LNA/Downconverter 1.80-2.0 GHz |
Tyco Electronics |
| 27 |
MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 28 |
MRF18030ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 29 |
MRF18030AR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 30 |
MRF18030ASR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| | | |
