| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
| 2 |
AM40-0023 |
1.710-1.910 GHz, ultra low noise pHEMT dual channel amplifier |
MA-Com |
| 3 |
AM40-0023 |
Ultra Low Noise pHEMT Dual Channel Amplifier, 1.710-1.910 GHz |
Tyco Electronics |
| 4 |
AT-11671 |
2-10 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 5 |
AT-12535 |
0.5-10 GHz General Purpose Gallium Arsenide FET |
AVANTEK |
| 6 |
AT-12570-5 |
0.5-10 GHz General Purpose Gallium Arsenide FET |
AVANTEK |
| 7 |
AT-8160 |
2-10 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 8 |
AT-8250 |
0.5-10 GHz Low Noise Gallium Arsenide FET |
AVANTEK |
| 9 |
AT-8251 |
0.5-10 GHz Low Noise Gallium Arsenide FET |
AVANTEK |
| 10 |
ATF-25100 |
0.5-10 GHz Low Noise Gallium Arsenide FET |
AVANTEK |
| 11 |
ATF-25170 |
0.5-10 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 12 |
ATF-25170 |
0.5-10 GHz Low Noise Gallium Arsenide FET |
AVANTEK |
| 13 |
ATF-25570 |
0.5-10 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 14 |
ATF-25570 |
0.5-10 GHz General Purpose Gallium Arsenide FET |
AVANTEK |
| 15 |
ATF-25735 |
0.5-10 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 16 |
ATF-25735 |
0.5-10 GHz General Purpose Gallium Arsenide FET |
AVANTEK |
| 17 |
ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 18 |
ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 19 |
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 20 |
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 21 |
BAT15-098 |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
Siemens |
| 22 |
BFP420 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
| 23 |
BXY43A |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
| 24 |
BXY43B |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
| 25 |
BXY43C |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
| 26 |
DMF3949-106 |
Chip on board mixer quad (to 10 GHz) |
Alpha Industries Inc |
| 27 |
DMF3950-106 |
Chip on board mixer quad (to 10 GHz) |
Alpha Industries Inc |
| 28 |
HMC110 |
5- bit digital attenuator DC- 10 GHz |
Hittite Microwave Corporation |
| 29 |
HMC121C8 |
GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz |
Hittite Microwave Corporation |
| 30 |
HMC171C8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 7 - 10 GHz |
Hittite Microwave Corporation |
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