No. |
Part Name |
Description |
Manufacturer |
1 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
2 |
AT27BV010-15JC |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM |
Atmel |
3 |
AT27BV010-15JI |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM |
Atmel |
4 |
AT27C010-15JC |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
5 |
AT27C010-15JI |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
6 |
AT28C010-15JC |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
7 |
AT28C010-15JI |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
8 |
AT49BV010-15JC |
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
Atmel |
9 |
AT49BV010-15JI |
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
Atmel |
10 |
MACH110-15JC |
High-density EE CMOS programmable logic, 32 macrocells, 32 flip-flops, 2 clock choices, 38 Inputs, 32 Outputs, 15ns |
Advanced Micro Devices |
11 |
MACH110-15JC |
High-Density EE CMOS Programmable Logic |
Lattice Semiconductor |
12 |
MACH210-15JC |
High-density EE CMOS programmable logic, 15ns |
Advanced Micro Devices |
13 |
MACH210-15JC |
High-Density EE CMOS Programmable Logic |
Lattice Semiconductor |
14 |
MACHLV210-15JC |
High Density EE CMOS Programmable Logic |
Lattice Semiconductor |
15 |
PALCE22V10-15JC |
Flash-erasable Reprogrammable |
Cypress |
16 |
PALLV22V10-15JC |
Low-Voltage Zero Power 24-Pin EE CMOS Versatile PAL Device |
Lattice Semiconductor |
17 |
PALLV22V10-15JI |
Low-Voltage Zero Power 24-Pin EE CMOS Versatile PAL Device |
Lattice Semiconductor |
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