No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE100 |
90.0- 110.0V transient voltage suppressor |
DC Components |
2 |
1.5KE200A |
Transient voltage suppressor. 1500 W. Breakdown voltage 190.0 V(min), 210.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
3 |
1.5KE200CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 190.0 V(min), 210.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
4 |
10A005 |
10.0 AMP SILICON RECTIFIERS |
Bytes |
5 |
10A05 |
10.0 AMP SILICON RECTIFIERS |
Bytes |
6 |
10A1 |
10.0 AMP SILICON RECTIFIERS |
Bytes |
7 |
10A10 |
10.0 AMP SILICON RECTIFIERS |
Bytes |
8 |
10A2 |
10.0 AMP SILICON RECTIFIERS |
Bytes |
9 |
10A4 |
10.0 AMP SILICON RECTIFIERS |
Bytes |
10 |
10A6 |
10.0 AMP SILICON RECTIFIERS |
Bytes |
11 |
10A8 |
10.0 AMP SILICON RECTIFIERS |
Bytes |
12 |
15KW110 |
110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
13 |
15KW110A |
110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
14 |
1N4187B |
110.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
15 |
1N4740 |
10.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
16 |
1N4740 |
1 W silicon zener diode. Nominal zener voltage 10.0 V. |
Fairchild Semiconductor |
17 |
1N4740A |
10.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
18 |
1N5240 |
500 mW silicon zener diode. Nominal zener voltage 10.0 V. |
Fairchild Semiconductor |
19 |
1N5240B |
10.0V 500 mW Zener Diode |
Continental Device India Limited |
20 |
1N5530A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
21 |
1N5530B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
22 |
1N5736B |
10.0V Voltage Reference Diode |
Philips |
23 |
1N6375 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
24 |
1N6383 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
25 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
26 |
1N758 |
10.0V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
27 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
28 |
1N758 |
400mW, 10.0 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
29 |
1N758A |
10.0V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
30 |
1N758A |
Voltage Regulator Diode 10.0V |
Philips |
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