No. |
Part Name |
Description |
Manufacturer |
1 |
1503-100A |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
2 |
1503-100B |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
3 |
1503-100C |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
4 |
2075-5000 |
Delay 5000 +/-100 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
5 |
ADL5306 |
60 dB-range (100 nA-100 µA) Low-Cost Logarithmic Converter |
Analog Devices |
6 |
ADL5306-EVAL |
60 dB-range (100 nA-100 µA) Low-Cost Logarithmic Converter |
Analog Devices |
7 |
ADL5306ACP |
60 dB-range (100 nA-100 µA) Low-Cost Logarithmic Converter |
Analog Devices |
8 |
ADL5306ACP-R2 |
60 dB-range (100 nA-100 µA) Low-Cost Logarithmic Converter |
Analog Devices |
9 |
ADL5306ACP-REEL7 |
60 dB-range (100 nA-100 µA) Low-Cost Logarithmic Converter |
Analog Devices |
10 |
CC4 |
50 x 100 NiCr on Alumina |
Vishay |
11 |
CC5 |
100 x 100 NiCr on Alumina |
Vishay |
12 |
DA28F320J5-100 |
Intel StrataFlash memory 32 Mbit. Access speed 100 ns |
Intel |
13 |
DAC_12B_10-100NS |
Analog Devices: Data Converters: DAC 12-Bit/ 10 ns to 100 ns Converters Selection Table |
Analog Devices |
14 |
DAC_8B_10-100NS |
Analog Devices: Data Converters: DAC 8-Bit/ 10 ns to 100 ns Converters Selection Table |
Analog Devices |
15 |
DS1249AB-100-IND |
100 ns, Vcc=5V+/-5%, 2048 K nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
16 |
DS1249Y-100 |
100 ns, Vcc=5V+/-10%, 2048 K nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
17 |
DS1249Y-100-IND |
100 ns, Vcc=5V+/-10%, 2048 K nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
18 |
DS1270AB-100-IND |
100 ns, Vcc=5V+/-5%, 16 M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
19 |
DS1270Y-100-IND |
100 ns, Vcc=5V+/-10%, 16 M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
20 |
DS1330AB-100 |
100 ns, Vcc=5V+/-5%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
21 |
DS1330AB-100-IND |
100 ns, Vcc=5V+/-5%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
22 |
DS1330Y-100-IND |
100 ns, Vcc=5V+/-10%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
23 |
DS2030AB-100 |
100 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
24 |
DS2030W-100 |
100 ns, 3.3 V, single-piece 256k nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
25 |
DS2030Y-100 |
100 ns, 4.5 V to 5.5 V, rechargeable 256k nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
26 |
DS2045AB-100 |
100 ns, 4.75 to 5.25 V, rechargeable 1M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
27 |
DS2045W-100 |
100 ns, 3.3 V, single-piece 1M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
28 |
DS2045Y-100 |
100 ns, 4.5 to 5.5 V, rechargeable 1M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
29 |
DT28F160S5-100 |
Word-wide FlashFile memory. 16 Mbit, access speed 100 ns |
Intel |
30 |
E28F320J5-100 |
Intel StrataFlash memory 32 Mbit. Access speed 100 ns |
Intel |
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