No. |
Part Name |
Description |
Manufacturer |
1 |
1503-100A |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
2 |
1503-100B |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
3 |
1503-100C |
Max delay 100 ns, Mechanically variable delay line |
Data Delay Devices Inc |
4 |
2075-5000 |
Delay 5000 +/-100 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
5 |
DA28F320J5-100 |
Intel StrataFlash memory 32 Mbit. Access speed 100 ns |
Intel |
6 |
DAC_12B_10-100NS |
Analog Devices: Data Converters: DAC 12-Bit/ 10 ns to 100 ns Converters Selection Table |
Analog Devices |
7 |
DAC_8B_10-100NS |
Analog Devices: Data Converters: DAC 8-Bit/ 10 ns to 100 ns Converters Selection Table |
Analog Devices |
8 |
DS1249AB-100-IND |
100 ns, Vcc=5V+/-5%, 2048 K nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
9 |
DS1249Y-100 |
100 ns, Vcc=5V+/-10%, 2048 K nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
10 |
DS1249Y-100-IND |
100 ns, Vcc=5V+/-10%, 2048 K nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
11 |
DS1270AB-100-IND |
100 ns, Vcc=5V+/-5%, 16 M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
12 |
DS1270Y-100-IND |
100 ns, Vcc=5V+/-10%, 16 M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
13 |
DS1330AB-100 |
100 ns, Vcc=5V+/-5%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
14 |
DS1330AB-100-IND |
100 ns, Vcc=5V+/-5%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
15 |
DS1330Y-100-IND |
100 ns, Vcc=5V+/-10%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
16 |
DS2030AB-100 |
100 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
17 |
DS2030W-100 |
100 ns, 3.3 V, single-piece 256k nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
18 |
DS2030Y-100 |
100 ns, 4.5 V to 5.5 V, rechargeable 256k nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
19 |
DS2045AB-100 |
100 ns, 4.75 to 5.25 V, rechargeable 1M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
20 |
DS2045W-100 |
100 ns, 3.3 V, single-piece 1M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
21 |
DS2045Y-100 |
100 ns, 4.5 to 5.5 V, rechargeable 1M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
22 |
DT28F160S5-100 |
Word-wide FlashFile memory. 16 Mbit, access speed 100 ns |
Intel |
23 |
E28F320J5-100 |
Intel StrataFlash memory 32 Mbit. Access speed 100 ns |
Intel |
24 |
K100UF |
10000 V rectifier 1.5-3 A forward current, 100 ns recovery time |
Voltage Multipliers |
25 |
M100UFG |
10000 V rectifier 10-100 mA forward current,100 ns recovery time |
Voltage Multipliers |
26 |
M160UFG |
16000 V rectifier 10-100 mA forward current,100 ns recovery time |
Voltage Multipliers |
27 |
MH25632BJ-10 |
Access time: 100 ns, 265K x 4 bit dynamic RAM |
Mitsubishi Electric Corporation |
28 |
MH51208ANA-10H |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
29 |
MH51208ANA-10L |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
30 |
MH51208UNA-10 |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
| | | |