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Datasheets for 100 NS

Datasheets found :: 164
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1503-100A Max delay 100 ns, Mechanically variable delay line Data Delay Devices Inc
2 1503-100B Max delay 100 ns, Mechanically variable delay line Data Delay Devices Inc
3 1503-100C Max delay 100 ns, Mechanically variable delay line Data Delay Devices Inc
4 2075-5000 Delay 5000 +/-100 ns, fixed high B.W. line Tr Data Delay Devices Inc
5 DA28F320J5-100 Intel StrataFlash memory 32 Mbit. Access speed 100 ns Intel
6 DAC_12B_10-100NS Analog Devices: Data Converters: DAC 12-Bit/ 10 ns to 100 ns Converters Selection Table Analog Devices
7 DAC_8B_10-100NS Analog Devices: Data Converters: DAC 8-Bit/ 10 ns to 100 ns Converters Selection Table Analog Devices
8 DS1249AB-100-IND 100 ns, Vcc=5V+/-5%, 2048 K nonvolatile SRAM MAXIM - Dallas Semiconductor
9 DS1249Y-100 100 ns, Vcc=5V+/-10%, 2048 K nonvolatile SRAM MAXIM - Dallas Semiconductor
10 DS1249Y-100-IND 100 ns, Vcc=5V+/-10%, 2048 K nonvolatile SRAM MAXIM - Dallas Semiconductor
11 DS1270AB-100-IND 100 ns, Vcc=5V+/-5%, 16 M nonvolatile SRAM MAXIM - Dallas Semiconductor
12 DS1270Y-100-IND 100 ns, Vcc=5V+/-10%, 16 M nonvolatile SRAM MAXIM - Dallas Semiconductor
13 DS1330AB-100 100 ns, Vcc=5V+/-5%, 256k nonvolatile SRAM with battery monitor MAXIM - Dallas Semiconductor
14 DS1330AB-100-IND 100 ns, Vcc=5V+/-5%, 256k nonvolatile SRAM with battery monitor MAXIM - Dallas Semiconductor
15 DS1330Y-100-IND 100 ns, Vcc=5V+/-10%, 256k nonvolatile SRAM with battery monitor MAXIM - Dallas Semiconductor
16 DS2030AB-100 100 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM MAXIM - Dallas Semiconductor
17 DS2030W-100 100 ns, 3.3 V, single-piece 256k nonvolatile SRAM MAXIM - Dallas Semiconductor
18 DS2030Y-100 100 ns, 4.5 V to 5.5 V, rechargeable 256k nonvolatile SRAM MAXIM - Dallas Semiconductor
19 DS2045AB-100 100 ns, 4.75 to 5.25 V, rechargeable 1M nonvolatile SRAM MAXIM - Dallas Semiconductor
20 DS2045W-100 100 ns, 3.3 V, single-piece 1M nonvolatile SRAM MAXIM - Dallas Semiconductor
21 DS2045Y-100 100 ns, 4.5 to 5.5 V, rechargeable 1M nonvolatile SRAM MAXIM - Dallas Semiconductor
22 DT28F160S5-100 Word-wide FlashFile memory. 16 Mbit, access speed 100 ns Intel
23 E28F320J5-100 Intel StrataFlash memory 32 Mbit. Access speed 100 ns Intel
24 K100UF 10000 V rectifier 1.5-3 A forward current, 100 ns recovery time Voltage Multipliers
25 M100UFG 10000 V rectifier 10-100 mA forward current,100 ns recovery time Voltage Multipliers
26 M160UFG 16000 V rectifier 10-100 mA forward current,100 ns recovery time Voltage Multipliers
27 MH25632BJ-10 Access time: 100 ns, 265K x 4 bit dynamic RAM Mitsubishi Electric Corporation
28 MH51208ANA-10H Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module Mitsubishi Electric Corporation
29 MH51208ANA-10L Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module Mitsubishi Electric Corporation
30 MH51208UNA-10 Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module Mitsubishi Electric Corporation


Datasheets found :: 164
Page: | 1 | 2 | 3 | 4 | 5 |



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