| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N2385 |
High-voltage silicon rectifier 10000V |
Motorola |
| 2 |
1N5184 |
Rectifier Diode 10000V 0.6A |
Motorola |
| 3 |
1N5184 |
10000 V, 0.1 A standard recovery rectifier |
Solid State Devices Inc |
| 4 |
ADA10000 |
The ADA10000 is a monolithic IC intended for use in applications requiring high linearity such as: Cellular Telephone Base Station ... |
Anadigics Inc |
| 5 |
ADA10000 |
The ADA10000 is a monolithic IC intended for use in applications requiring high linearity such as: Cellular Telephone Base Station ... |
Anadigics Inc |
| 6 |
ADA10000S24Q1 |
Linear Amplifier MMIC Data Sheet - Rev 2.3 |
Anadigics Inc |
| 7 |
ADA10000S3C |
Linear Amplifier MMIC |
Anadigics Inc |
| 8 |
ADA10000S3CTR |
Linear Amplifier MMIC Data Sheet - Rev 2.3 |
Anadigics Inc |
| 9 |
ADCH-80 |
RF Choke 50 MHz to 10000 MHz |
Mini-Circuits |
| 10 |
BYX29-100000 |
High voltage rectifier diodes |
Mullard |
| 11 |
BYX29-100000 |
Controlled Avalanche High Voltage Diode 100kV |
Philips |
| 12 |
BYX29/100000 |
E.T.H. RECTIFIER DIODE 100kV |
mble |
| 13 |
C1962 |
Channel photomultiplexer, 3/4 inche, window material quartz., dark current 10000 pA. |
PerkinElmer Optoelectronics |
| 14 |
C1963 |
Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 10000 pA. |
PerkinElmer Optoelectronics |
| 15 |
CDD1933 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
| 16 |
CFB949 |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 |
Continental Device India Limited |
| 17 |
CFB949A |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A |
Continental Device India Limited |
| 18 |
CFB949AP |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP |
Continental Device India Limited |
| 19 |
CFB949P |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P |
Continental Device India Limited |
| 20 |
CFD1275 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 |
Continental Device India Limited |
| 21 |
CFD1275A |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949A |
Continental Device India Limited |
| 22 |
CFD1275AP |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP |
Continental Device India Limited |
| 23 |
CFD1275P |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949P |
Continental Device India Limited |
| 24 |
CFD1933 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
| 25 |
CN1933 |
2.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
| 26 |
CP1342 |
2.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
| 27 |
CSB1272 |
10.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
| 28 |
CSD1638 |
1.200W Low Frequency PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
| 29 |
DZ2410000L |
Zener Diodes |
Panasonic |
| 30 |
DZ2610000L |
Zener Diodes |
Panasonic |
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