| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IDT75N42102S100BS |
32K x72 Network Search Engine |
IDT |
| 2 |
KM416C4100BS-45 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 45ns |
Samsung Electronic |
| 3 |
KM416C4100BS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns |
Samsung Electronic |
| 4 |
KM416C4100BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
| 5 |
KM416V4100BS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 6 |
KM416V4100BS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
| 7 |
KM416V4100BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 8 |
KM416V4100BS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 9 |
KM416V4100BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 10 |
KM416V4100BS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 11 |
KM48C2100BS-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 12 |
KM48C2100BS-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 13 |
KM48C2100BS-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 14 |
KM48C2100BSL-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 15 |
KM48C2100BSL-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 16 |
KM48C2100BSL-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 17 |
KM48V2100BS-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 18 |
KM48V2100BS-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 19 |
KM48V2100BS-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 20 |
KM48V2100BSL-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 21 |
KM48V2100BSL-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 22 |
KM48V2100BSL-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 23 |
LH532100BS |
CMOS 2M(256K x 8) Mask-Programmable ROM |
SHARP |
| 24 |
LH532100BS-1 |
CMOS 2M(256K x 8) Mask-Programmable ROM |
SHARP |
| 25 |
LH532100BSR |
CMOS 2M(256K x 8) Mask-Programmable ROM |
SHARP |
| 26 |
LH532100BSR-1 |
CMOS 2M(256K x 8) Mask-Programmable ROM |
SHARP |
| 27 |
LM5100BSD/NOPB |
2A High Voltage High-Side and Low-Side Gate Driver 10-WSON -40 to 125 |
Texas Instruments |
| 28 |
PSMN013-100BS |
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK |
Nexperia |
| 29 |
PSMN013-100BS |
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK |
NXP Semiconductors |
| 30 |
PSMN016-100BS |
N-channel 100V 16 mΩ standard level MOSFET in D2PAK |
Nexperia |
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