| No. |
Part Name |
Description |
Manufacturer |
| 1 |
16CYQ100CSCS |
16A 100V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package DLA Number 1N7070CCT3 |
International Rectifier |
| 2 |
16YQ100CSCS |
16A 100V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
| 3 |
KM416C4100CS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns |
Samsung Electronic |
| 4 |
KM416C4100CS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
| 5 |
KM416V4100CS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 6 |
KM416V4100CS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
| 7 |
KM416V4100CS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 8 |
KM416V4100CS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 9 |
KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 10 |
KM416V4100CS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 11 |
KM44C4100CS-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 12 |
KM44C4100CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 13 |
KM44C4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 14 |
KM44C4100CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 15 |
KM44V4100CS-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 16 |
KM44V4100CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 17 |
KM44V4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 18 |
KM44V4100CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 19 |
LM5100CSD/NOPB |
1A High Voltage High-Side and Low-Side Gate Driver 10-WSON -40 to 125 |
Texas Instruments |
| 20 |
LTC1100CS |
Precision/ Chopper-Stabilized Instrumentation Amplifier |
Linear Technology |
| 21 |
LTC1100CSW |
Precision, Zero-Drift Instrumentation Amplifier |
Linear Technology |
| 22 |
LTC1100CSW#PBF |
Precision, Zero-Drift Instrumentation Amplifier |
Linear Technology |
| 23 |
LTC1100CSW#TR |
Precision, Zero-Drift Instrumentation Amplifier |
Linear Technology |
| 24 |
LTC1100CSW#TRPBF |
Precision, Zero-Drift Instrumentation Amplifier |
Linear Technology |
| 25 |
MBR10100CS2TR-E1 |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
| 26 |
MBR10100CS2TR-G1 |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
| 27 |
MBR20100CS2TR-E1 |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
| 28 |
MBR20100CS2TR-G1 |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
| 29 |
PM100CSA060 |
INTELLIGENT POWER MODULES |
Mitsubishi Electric Corporation |
| 30 |
PM100CSA060 |
MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE |
Mitsubishi Electric Corporation |
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