No. |
Part Name |
Description |
Manufacturer |
1 |
HM624100HC |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
2 |
HM624100HCJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
3 |
HM624100HCJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
4 |
HM624100HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
5 |
HM624100HCLJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
6 |
HM624100HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
7 |
HM62W4100HC |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
8 |
HM62W4100HCJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
9 |
HM62W4100HCJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
10 |
HM62W4100HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
11 |
HM62W4100HCLJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
12 |
HM62W4100HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
13 |
QM100HC-M |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
14 |
WS512K32F-100HCE |
100ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 |
White Electronic Designs |
15 |
WS512K32F-100HCEA |
100ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 |
White Electronic Designs |
16 |
WS512K32N-100HCE |
100ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 |
White Electronic Designs |
17 |
WS512K32N-100HCEA |
100ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 |
White Electronic Designs |
18 |
WS512K32NV-100HC |
100ns; 3.3V power supply; 512K x 32 SRAM module |
White Electronic Designs |
19 |
WS512K32NV-100HCA |
100ns; 3.3V power supply; 512K x 32 SRAM module |
White Electronic Designs |
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