| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 2 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 3 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 4 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 5 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 6 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 7 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 8 |
ECQV100VDC |
Stacked Metallized Film Capacitor |
Panasonic |
| 9 |
MC1C-P-DC100 |
Relay. Coil voltage 100VDC. Contact arrangement SPDT. Cover STD. Mounting PCB. |
Global Components & Controls |
| 10 |
MC1C-P-DC100-TF |
Relay. Coil voltage 100VDC. Contact arrangement SPDT. Cover top flange. Mounting PCB. |
Global Components & Controls |
| 11 |
MC1C-S-DC100-TF |
Relay. Coil voltage 100VDC. Contact arrangement SPDT. Cover top flange. Mounting socket. |
Global Components & Controls |
| 12 |
MC2C-P-DC100 |
Relay. Coil voltage 100VDC. Contact arrangement DPDT. Cover STD. Mounting PCB. |
Global Components & Controls |
| 13 |
MC2C-P-DC100-TF |
Relay. Coil voltage 100VDC. Contact arrangement DPDT. Cover top flange. Mounting PCB. |
Global Components & Controls |
| 14 |
MC2C-S-DC100 |
Relay. Coil voltage 100VDC. Contact arrangement DPDT. Cover STD. Mounting socket. |
Global Components & Controls |
| 15 |
MC2C-S-DC100-TF |
Relay. Coil voltage 100VDC. Contact arrangement DPDT. Cover top flange. Mounting socket. |
Global Components & Controls |
| 16 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 17 |
STM32F100VD |
Mainstream Value line, ARM Cortex-M3 MCU with 384 Kbytes Flash, 24 MHz CPU, motor control and CEC functions |
ST Microelectronics |
| 18 |
STM32F100VDT6 |
Mainstream Value line, ARM Cortex-M3 MCU with 384 Kbytes Flash, 24 MHz CPU, motor control and CEC functions |
ST Microelectronics |
| 19 |
STM32F100VDT6B |
Mainstream Value line, ARM Cortex-M3 MCU with 384 Kbytes Flash, 24 MHz CPU, motor control and CEC functions |
ST Microelectronics |
| 20 |
STM32F100VDT6BTR |
Mainstream Value line, ARM Cortex-M3 MCU with 384 Kbytes Flash, 24 MHz CPU, motor control and CEC functions |
ST Microelectronics |
| 21 |
STM32F100VDT7B |
Mainstream Value line, ARM Cortex-M3 MCU with 384 Kbytes Flash, 24 MHz CPU, motor control and CEC functions |
ST Microelectronics |
| 22 |
TIP122 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 23 |
TIP122 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 24 |
TIP127 |
PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 25 |
TIP127 |
PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 26 |
TIP2955 |
PNP silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, PD = 90W. |
USHA India LTD |
| 27 |
TIP3055 |
NPN, silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 90W. |
USHA India LTD |
| 28 |
UN100 |
NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD |
USHA India LTD |
| 29 |
UN100 |
NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD |
USHA India LTD |
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