| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor |
GHz Technology |
| 2 |
1014-12 |
Pulsed Power L-Band (Si) |
Microsemi |
| 3 |
1014-2 |
2 W, 28 V, 1000-1400 MHz common base transistor |
GHz Technology |
| 4 |
1014-2 |
Pulsed Power L-Band (Si) |
Microsemi |
| 5 |
1014-6A |
Pulsed Power L-Band (Si) |
Microsemi |
| 6 |
2SK1014-01 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 7 |
AT71M2CL1014-BAO |
CameraLink. Linescan camera. Resolution 1K. Pixels size 14 um |
Atmel |
| 8 |
AT71M2LV1014-BAO |
LVDS linescan camera. Resolution 1K. Pixels size 14 um. |
Atmel |
| 9 |
AT71SM2CL1014-BA0 |
CameraLink. Linescan camera. Resolution 1K. Pixels size 14 um. AViiVA M2 CL 1014. |
Atmel |
| 10 |
C67076-S1014-A2 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
Siemens |
| 11 |
C67078-A1014-A2 |
main ratings |
Siemens |
| 12 |
LC11014-241 |
Computer Image Signal Processing Full-Color Gray-Scale Processor |
SANYO |
| 13 |
MRA1014-12 |
MICroAMP 12W, Broadband 1000-1400MHz, internally compensated, gold metalized, diffused ballast resistors |
TRW |
| 14 |
MRA1014-2 |
MICroAMP 2W, Broadband 1000-1400MHz, internally compensated, gold metalized, diffused ballast resistors |
TRW |
| 15 |
MRA1014-35 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 16 |
MRA1014-35 |
MICroAMP 35W, Broadband 1000-1400MHz, internally compensated, gold metalized, diffused ballast resistors |
TRW |
| 17 |
MRA1014-6 |
MICroAMP 6W, Broadband 1000-1400MHz, internally compensated, gold metalized, diffused ballast resistors |
TRW |
| 18 |
SD1014-02 |
RF NPN Transistor |
Microsemi |
| 19 |
SD1014-06 |
CW Class C ≤ 1 Ghz |
Microsemi |
| 20 |
TC1014-1.8VCT |
50mA CMOS LDOs with shutdown and reference bypass, output voltages: 1.8V |
Microchip |
| 21 |
TC1014-1.8VCT713 |
The TC1014, TC1015, and TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 22 |
TC1014-2.5VCT |
50mA CMOS LDOs with shutdown and reference bypass, output voltages: 2.5V |
Microchip |
| 23 |
TC1014-2.5VCT |
50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS |
TelCom Semiconductor |
| 24 |
TC1014-2.5VCT713 |
The TC1014, TC1015, and TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 25 |
TC1014-2.6VCT |
50mA CMOS LDOs with shutdown and reference bypass, output voltages: 2.6V |
Microchip |
| 26 |
TC1014-2.6VCT713 |
The TC1014, TC1015, and TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 27 |
TC1014-2.7VCT |
50mA CMOS LDOs with shutdown and reference bypass, output voltages: 2.7V |
Microchip |
| 28 |
TC1014-2.7VCT |
50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS |
TelCom Semiconductor |
| 29 |
TC1014-2.7VCT713 |
The TC1014, TC1015, and TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 30 |
TC1014-2.85VCT |
50mA CMOS LDOs with shutdown and reference bypass, output voltages: 2.85V |
Microchip |
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