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Datasheets for 1048

Datasheets found :: 26
Page: | 1 |
No. Part Name Description Manufacturer
1 LH540203D-15 CMOS 1048 x 9 asynchronous FIFO SHARP
2 LH540203D-20 CMOS 1048 x 9 asynchronous FIFO SHARP
3 LH540203D-25 CMOS 1048 x 9 asynchronous FIFO SHARP
4 LH540203D-35 CMOS 1048 x 9 asynchronous FIFO SHARP
5 LH540203D-50 CMOS 1048 x 9 asynchronous FIFO SHARP
6 LH540203K-15 CMOS 1048 x 9 asynchronous FIFO SHARP
7 LH540203K-20 CMOS 1048 x 9 asynchronous FIFO SHARP
8 LH540203K-25 CMOS 1048 x 9 asynchronous FIFO SHARP
9 LH540203K-35 CMOS 1048 x 9 asynchronous FIFO SHARP
10 LH540203K-50 CMOS 1048 x 9 asynchronous FIFO SHARP
11 LH540203U-15 CMOS 1048 x 9 asynchronous FIFO SHARP
12 LH540203U-20 CMOS 1048 x 9 asynchronous FIFO SHARP
13 LH540203U-25 CMOS 1048 x 9 asynchronous FIFO SHARP
14 LH540203U-35 CMOS 1048 x 9 asynchronous FIFO SHARP
15 LH540203U-50 CMOS 1048 x 9 asynchronous FIFO SHARP
16 M38747M4T Single-chip 8-bit CMOS microcomputer. ROM 16384 bytes, RAM 1048 bytes. Mask ROM version. Mitsubishi Electric Corporation
17 M38747M6T Single-chip 8-bit CMOS microcomputer. ROM 49152 bytes, RAM 1048 bytes. Mask ROM version. Mitsubishi Electric Corporation
18 M38749MCT Single-chip 8-bit CMOS microcomputer. ROM 49152 bytes, RAM 1048 bytes. Mask ROM version. Mitsubishi Electric Corporation
19 M5M29FB800VP 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY Mitsubishi Electric Corporation
20 M5M29FT800RV-10 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY Mitsubishi Electric Corporation
21 M5M29FT800RV-12 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY Mitsubishi Electric Corporation
22 M5M29FT800VP 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY Mitsubishi Electric Corporation
23 M5M29GB 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY Mitsubishi Electric Corporation
24 M5M29GB160BVP 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY Mitsubishi Electric Corporation
25 M5M29GT160BVP 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY Mitsubishi Electric Corporation
26 TBP28L166NW Standard and low power programmable read-only memory, 1048 x 8 bit, 30ns Texas Instruments


Datasheets found :: 26
Page: | 1 |



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