| No. |
Part Name |
Description |
Manufacturer |
| 1 |
36DY154F010AD2A |
Aluminum Capacitors + 85 C, Large Can |
Vishay |
| 2 |
74ALS10AD |
Triple 3-Input NAND gate |
Philips |
| 3 |
74LVC10AD |
Triple 3-input NAND gate |
Nexperia |
| 4 |
74LVC10AD |
Triple 3-input NAND gate |
NXP Semiconductors |
| 5 |
74LVC10AD |
Triple 3-input NAND gate |
Philips |
| 6 |
74LVC10ADB |
Triple 3-input NAND gate |
Nexperia |
| 7 |
74LVC10ADB |
Triple 3-input NAND gate |
NXP Semiconductors |
| 8 |
74LVC10ADB |
Triple 3-input NAND gate |
Philips |
| 9 |
ADM1810ADM1813 |
Microprocessor Reset Circuits |
Analog Devices |
| 10 |
BQ77910ADBT |
Standalone 4-10 Cell Precision Protector for Li-Ion Chemistries 38-TSSOP -40 to 85 |
Texas Instruments |
| 11 |
BQ77910ADBTR |
Standalone 4-10 Cell Precision Protector for Li-Ion Chemistries 38-TSSOP -40 to 85 |
Texas Instruments |
| 12 |
CA3310AD |
CMOS, 10-Bit, A/D Converters with Internal Track and Hold |
Intersil |
| 13 |
CM10AD00-24H |
Converter Inverter Brake Modules:1200V |
Mitsubishi Electric Corporation |
| 14 |
CM10AD05-12H |
CIB Modules: 600V |
Mitsubishi Electric Corporation |
| 15 |
ISL9N310AD3 |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
Fairchild Semiconductor |
| 16 |
ISL9N310AD3ST |
N-Channel Logic Level PWM Optimized UltraFET� Trench Power MOSFETs |
Fairchild Semiconductor |
| 17 |
ISL9N310AD3ST_NL |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
Fairchild Semiconductor |
| 18 |
LMR23610ADDA |
SIMPLE SWITCHER, 36V 1A Synchronous Step-Down Converter 8-SO PowerPAD -40 to 125 |
Texas Instruments |
| 19 |
LMR23610ADDAR |
SIMPLE SWITCHER, 36V 1A Synchronous Step-Down Converter 8-SO PowerPAD -40 to 125 |
Texas Instruments |
| 20 |
MC74HC10AD |
Triple 3-Input NAND Gate |
Motorola |
| 21 |
MC74HC10ADT |
Triple 3-Input NAND Gate |
Motorola |
| 22 |
MC78L10AD |
3-TERMINAL 0.1A NEGATIVE VOLTAGE REGULATORS |
Boca Semiconductor Corporation |
| 23 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
| 24 |
MJE3055T |
NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
USHA India LTD |
| 25 |
NSC810AD-1I/883 |
NSC810A RAM -I/O - TIMER |
National Semiconductor |
| 26 |
NSC810AD-1I/A |
NSC810A RAM -I/O - TIMER |
National Semiconductor |
| 27 |
NSC810AD-1M/883 |
NSC810A RAM -I/O - TIMER |
National Semiconductor |
| 28 |
NSC810AD-1M/A |
NSC810A RAM -I/O - TIMER |
National Semiconductor |
| 29 |
NSC810AD-3I/883 |
NSC810A RAM -I/O - TIMER |
National Semiconductor |
| 30 |
NSC810AD-3I/A |
NSC810A RAM -I/O - TIMER |
National Semiconductor |
| | | |
