| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AIM5D10B060M1 |
IPM5 Intelligent Power Modules |
Alpha & Omega Semiconductor |
| 2 |
BMT0610B04 |
Silicon microwave power transistor. |
BOPOLARICS |
| 3 |
DS_S1T2410B01 |
bipolar integrated circuit designed as a telephone bell replacement |
Samsung Electronic |
| 4 |
DS_S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 5 |
S1T2410B01 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 6 |
S1T2410B01-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 7 |
S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 8 |
S1T2410B02-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 9 |
SZ10B0 |
SURFACE MOUNT SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 10 |
T10B035 |
Glass passivated junction |
Littelfuse |
| 11 |
T10B035B |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 32V,max. Ir = 50uA @ Vr = 35V,max, Bulk (500pcs). |
Littelfuse |
| 12 |
T10B035T |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 32V,max. Ir = 50uA @ Vr = 35V,max, Tape and reeled (1500pcs). |
Littelfuse |
| 13 |
T10B065 |
Glass passivated junction |
Littelfuse |
| 14 |
T10B065B |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 55V,max. Ir = 50uA @ Vr = 65V,max, Bulk (500pcs). |
Littelfuse |
| 15 |
T10B065T |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 55V,max. Ir = 50uA @ Vr = 65V,max, Tape and reeled (1500pcs). |
Littelfuse |
| 16 |
TPD1E10B06 |
Single Channel ESD in 0402 package with 10pF Capacitance and 6V Breakdown |
Texas Instruments |
| 17 |
TPD1E10B06DPYR |
Single-Channel ESD in 0402 Package With 10pF Capacitance and 6V Breakdown 2-X1SON -40 to 125 |
Texas Instruments |
| 18 |
TPD1E10B06DPYT |
Single-Channel ESD in 0402 Package With 10pF Capacitance and 6V Breakdown 2-X1SON -40 to 125 |
Texas Instruments |
| 19 |
TPD1E10B09 |
Single Channel ESD Protection in 0402 package with 10pF Capacitance and 9V Breakdown |
Texas Instruments |
| 20 |
TPD1E10B09DPYR |
Single-Channel ESD Protection in 0402 Package With 10pF Capacitance and 9V Breakdown 2-X1SON -40 to 125 |
Texas Instruments |
| 21 |
TPD1E10B09DPYT |
Single-Channel ESD Protection in 0402 Package With 10pF Capacitance and 9V Breakdown 2-X1SON |
Texas Instruments |
| 22 |
TS10B01G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 23 |
TS10B02G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 24 |
TS10B03G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 25 |
TS10B04G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 26 |
TS10B05G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 27 |
TS10B06G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 28 |
TS10B07G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 29 |
XC9210B092KL |
Synchronous Step-Down DC / DC Controller ICs |
Torex Semiconductor |
| 30 |
XC9210B092KR |
Synchronous Step-Down DC / DC Controller ICs |
Torex Semiconductor |
| | | |
