| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1110FE |
1000 V single phase bridge 1.4-1.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 2 |
1210FE |
1000 V single phase bridge 3.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 3 |
AME8810FEGT |
600mA CMOS LDO |
AME |
| 4 |
AME8810FEGT |
600mA CMOS LDO |
Analog Microelectronics |
| 5 |
HN3C10FE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 6 |
LPC1810FET100 |
0kB flash, 136kB SRAM, no USB, TFBGA100 package |
NXP Semiconductors |
| 7 |
MAX4210FETT |
+2.7 V to +5.5 V, High-side power and current monitor |
MAXIM - Dallas Semiconductor |
| 8 |
MAX4210FETT+ |
High-Side Power and Current Monitors |
MAXIM - Dallas Semiconductor |
| 9 |
MAX4210FETT+T |
High-Side Power and Current Monitors |
MAXIM - Dallas Semiconductor |
| 10 |
MAX4210FEUA |
+2.7 V to +5.5 V, High-side power and current monitor |
MAXIM - Dallas Semiconductor |
| 11 |
MAX4210FEUA+ |
High-Side Power and Current Monitors |
MAXIM - Dallas Semiconductor |
| 12 |
MAX4210FEUA+T |
High-Side Power and Current Monitors |
MAXIM - Dallas Semiconductor |
| 13 |
MAX9610FELT+ |
1µA, µDFN/SC70, Lithium-Ion Battery, Precision Current-Sense Amplifier |
MAXIM - Dallas Semiconductor |
| 14 |
MAX9610FELT+T |
1µA, µDFN/SC70, Lithium-Ion Battery, Precision Current-Sense Amplifier |
MAXIM - Dallas Semiconductor |
| 15 |
MAX9610FEXK+ |
1µA, µDFN/SC70, Lithium-Ion Battery, Precision Current-Sense Amplifier |
MAXIM - Dallas Semiconductor |
| 16 |
MAX9610FEXK+T |
1µA, µDFN/SC70, Lithium-Ion Battery, Precision Current-Sense Amplifier |
MAXIM - Dallas Semiconductor |
| 17 |
RN1910FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 18 |
RN2910FE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 19 |
RN4910FE |
Transistor Silicon PNP � NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 20 |
SCANPSC110FE-QV |
SCAN Bridge Hierarchical and Multidrop Addressable JTAG Port (IEEE 1149.1 Support) |
National Semiconductor |
| 21 |
SSM6K210FE |
Small-signal MOSFET |
TOSHIBA |
| 22 |
Z8018010FEC |
ENHANCED Z180 MICROPROCESSOR |
Zilog |
| 23 |
Z8018110FEC |
SMART ACCESS CONTROLLER (SAC��) |
Zilog |
| 24 |
Z843010FEC |
Counter/timer circuit, 10MHz |
Zilog |
| 25 |
Z84C0010FEC |
CPU central processing unit, 10 MHz |
Zilog |
| 26 |
Z84C0010FEC1508 |
CPU central processing unit, 10 MHz |
Zilog |
| 27 |
Z84C2010FEC |
Parallel input/output |
Zilog |
| 28 |
Z84C3010FEC |
Counter/timer circuit, 10MHz |
Zilog |
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