No. |
Part Name |
Description |
Manufacturer |
1 |
10J4B41 |
RECTIFIER STACK (BRIDGE) |
TOSHIBA |
2 |
10JC11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
3 |
10JD11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
4 |
10JL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
5 |
10JL2CZ47 |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
6 |
10JL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
7 |
1210JAXXX |
High Voltage MLC Chip |
AVX Corporation |
8 |
1210JXXX |
High Voltage MLC Chip |
AVX Corporation |
9 |
29C010JC-1 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. |
Turbo IC |
10 |
29C010JC-1 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
11 |
29C010JC-2 |
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
12 |
29C010JC-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
13 |
29C010JC-3 |
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
14 |
29C010JC-3 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
15 |
29C010JI-1 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
16 |
29C010JI-1 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. |
Turbo IC |
17 |
29C010JI-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
18 |
29C010JI-2 |
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
19 |
29C010JI-3 |
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
20 |
29C010JI-3 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
21 |
29C010JM-1 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
22 |
29C010JM-1 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. |
Turbo IC |
23 |
29C010JM-2 |
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
24 |
29C010JM-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
25 |
29C010JM-3 |
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
26 |
29C010JM-3 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
27 |
310J |
Ultra Low Bias Current Varactor Bridge Operational Amplifiers |
Intronics |
28 |
516D336M010JL6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
29 |
516D476M010JL6A |
Aluminum Capacitors + 85C, Miniature, Axial Lead |
Vishay |
30 |
54H10J |
Triple 3-Input NAND Gate |
Motorola |
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