No. |
Part Name |
Description |
Manufacturer |
1 |
GLT625608-10J3 |
32K x 8 SLOW SPEED CMOS STATIC RAM |
etc |
2 |
GLT625608-10J3 |
10ns; 32K x 8 low speed CMOS static SRAM |
G-LINK Technology |
3 |
GLT7256L08-10J3 |
10ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM |
G-LINK Technology |
4 |
GT10J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
5 |
GT10J303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
6 |
GT10J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
7 |
GT10J312 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
8 |
GT10J312(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
9 |
GT10J321 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
TOSHIBA |
10 |
TP3410J304 |
ISDN Basic Access Echo-Cancelling 2B1Q U Transceiver |
National Semiconductor |
11 |
TP3410J304-X |
ISDN Basic Access Echo-Cancelling 2B1Q U Transceiver |
National Semiconductor |
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