| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC4710LS |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 2 |
AQY210LSX |
PhotoMOS relay, GU (general use) type. 1-channel(form A) current limit function. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 3 |
AQY210LSZ |
PhotoMOS relay, GU (general use) type. 1-channel(form A) current limit function. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 4 |
ATS610LSA |
Dynamic, Peak-Detecting, Differential Hall-Effect Gear-Tooth Sensors |
Allegro MicroSystems |
| 5 |
ATS610LSC |
Dynamic, Peak-Detecting, Differential Hall-Effect Gear-Tooth Sensors |
Allegro MicroSystems |
| 6 |
BLF6G10LS-135RN |
Power LDMOS transistor |
NXP Semiconductors |
| 7 |
BLF6G10LS-160RN |
Power LDMOS transistor |
NXP Semiconductors |
| 8 |
BLF6G10LS-200RN |
Power LDMOS transistor |
NXP Semiconductors |
| 9 |
BLF6G10LS-260PRN |
Power LDMOS transistor |
NXP Semiconductors |
| 10 |
BLF6H10LS-160 |
Power LDMOS transistor |
NXP Semiconductors |
| 11 |
BLF7G10LS-250 |
Power LDMOS transistor |
NXP Semiconductors |
| 12 |
BLF8G10LS-160 |
Power LDMOS transistor |
NXP Semiconductors |
| 13 |
BLF8G10LS-160V |
Power LDMOS transistor |
NXP Semiconductors |
| 14 |
BLF8G10LS-270 |
Power LDMOS transistor |
NXP Semiconductors |
| 15 |
BLF8G10LS-270GV |
Power LDMOS transistor |
NXP Semiconductors |
| 16 |
BLF8G10LS-270V |
Power LDMOS transistor |
NXP Semiconductors |
| 17 |
BLF8G10LS-300P |
Power LDMOS transistor |
NXP Semiconductors |
| 18 |
BLU6H0410LS-600P |
Power LDMOS transistor |
NXP Semiconductors |
| 19 |
DMN3010LSS |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 20 |
DMN3010LSS-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 21 |
FM810LS3X |
4.63V, Active High Precision Reset Generator Circuit |
Fairchild Semiconductor |
| 22 |
GAL16V8D-10LS |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 23 |
H7N0310LS |
Transistors>Switching/MOSFETs |
Renesas |
| 24 |
LBA110LS |
DUAL POLE OptoMOS Relay |
Clare Inc |
| 25 |
LBA110LSTR |
DUAL POLE OptoMOS Relay |
Clare Inc |
| 26 |
LCA110LS |
Single Pole OptoMOS Relay |
Clare Inc |
| 27 |
LCA110LSTR |
Single Pole OptoMOS Relay |
Clare Inc |
| 28 |
MRF21010 |
MRF21010R1, MRF21010LSR1 2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs |
Motorola |
| 29 |
MRF21010LSR1 |
2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET |
Freescale (Motorola) |
| 30 |
MRF21010LSR1 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Motorola |
| | | |
