| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 2 |
2N3824 |
Trans JFET N-CH 50V 10mA Si 4-Pin TO-72 |
New Jersey Semiconductor |
| 3 |
2N5018 |
TRANS JFET P-CH 10MA 3TO-18 |
New Jersey Semiconductor |
| 4 |
2N7002E |
Small Signal MOSFET 60V 310mA 2.5 Ohm Single N-Channel SOT-23 |
ON Semiconductor |
| 5 |
2SC4256 |
NPN Triple Diffused Planar Silicon Transistor 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 6 |
2SC4476 |
NPN Triple Diffused Planar Silicon Transistor 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 7 |
2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 8 |
2SC4634LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 9 |
2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 10 |
2SC4710LS |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 11 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 12 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 13 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 14 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 15 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 16 |
API9221 |
Car/Wall or USB Supply Input Lithium Battery Charge with OVP USB Bypass and 10mA LDO |
Diodes |
| 17 |
API9221FCG-13 |
Car/Wall or USB Supply Input Lithium Battery Charge with OVP USB Bypass and 10mA LDO |
Diodes |
| 18 |
BS616UV1010CI |
150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit |
Brilliance Semiconductor |
| 19 |
BU1001 |
βU1001 4 NPN 10mA transistors |
IPRS Baneasa |
| 20 |
BU2001 |
βU2001 5 NPN 10mA transistors 1 Zener diode |
IPRS Baneasa |
| 21 |
BU33DV5G |
1.75V to 4.5V, 10mA 1ch Synchronous Boost DC/DC Converter |
ROHM |
| 22 |
BU33DV5G-GTR |
1.75V to 4.5V, 10mA 1ch Synchronous Boost DC/DC Converter |
ROHM |
| 23 |
CD1N4148 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 24 |
CMBD914 |
0.250W SMD Single Switching Diode , 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 25 |
CY7C179-10JC |
32K x 18K; 10.5ns; 210mA PCI prototype board |
Altera Corporation |
| 26 |
E241 |
Red, T-1 3/4, right angle leads, LED (5mm). Lens diffused. Max.luminous intensity at 10mA 32.0mcd. Typ. forward voltage at 20mA 2.0V. |
Gilway Technical Lamp |
| 27 |
E242 |
Orange, T-1 3/4, right angle leads, LED (5mm). Lens diffused. Max.luminous intensity at 10mA 32.0mcd. Typ. forward voltage at 20mA 2.0V. |
Gilway Technical Lamp |
| 28 |
E244 |
Yellow, T-1 3/4, right angle leads, LED (5mm). Lens diffused. Max.luminous intensity at 10mA 20.0mcd. Typ. forward voltage at 20mA 2.1V. |
Gilway Technical Lamp |
| 29 |
E246 |
Green, T-1 3/4, right angle leads, LED (5mm). Lens diffused. Max.luminous intensity at 10mA 20.0mcd. Typ. forward voltage at 20mA 2.2V. |
Gilway Technical Lamp |
| 30 |
EA401 |
Red, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 12.5mcd. Typ. forward voltage at 20mA 2.0V. |
Gilway Technical Lamp |
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