| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HGTP10N40E1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 2 |
HGTP10N40E1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 3 |
MTB10N40E |
TMOS POWER FET 10 AMPERES |
Motorola |
| 4 |
MTB10N40E |
10 Amp D2PAK Surface Mount Products, N-Channel, VDSS 400 |
ON Semiconductor |
| 5 |
MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 6 |
MTP10N40E |
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS |
Motorola |
| 7 |
MTP10N40E |
10 Amp TO-220AB, N-Channel, VDSS 400 |
ON Semiconductor |
| 8 |
MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 9 |
PHP10N40E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 10 |
PHX10N40E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 11 |
PHX5N40E |
PowerMOS transistor Isolated version of PHP10N40E |
Philips |
| | | |
