| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10PM |
CASE OUTLINES |
IPRS Baneasa |
| 2 |
10PM CASE |
CASE SHAPE AND DIMENSIONS |
IPRS Baneasa |
| 3 |
10PM03 |
10A Single Phase Rectifier Bridge 30V |
IPRS Baneasa |
| 4 |
10PM05 |
Single-phase rectifier bridges |
IPRS Baneasa |
| 5 |
10PM05 |
10A Single Phase Rectifier Bridge 50V |
IPRS Baneasa |
| 6 |
10PM1 |
Single-phase rectifier bridges |
IPRS Baneasa |
| 7 |
10PM1 |
10A Single Phase Rectifier Bridge 100V |
IPRS Baneasa |
| 8 |
10PM2 |
Single-phase rectifier bridges |
IPRS Baneasa |
| 9 |
10PM2 |
10A Single Phase Rectifier Bridge 200V |
IPRS Baneasa |
| 10 |
10PM4 |
Single-phase rectifier bridges |
IPRS Baneasa |
| 11 |
10PM4 |
10A Single Phase Rectifier Bridge 400V |
IPRS Baneasa |
| 12 |
10PM4AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 400V |
IPRS Baneasa |
| 13 |
10PM6AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 600V |
IPRS Baneasa |
| 14 |
10PM8AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 800V |
IPRS Baneasa |
| 15 |
10PMAC CASE |
CASE SHAPE AND DIMENSIONS |
IPRS Baneasa |
| 16 |
29C010PM-1 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
| 17 |
29C010PM-1 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. |
Turbo IC |
| 18 |
29C010PM-2 |
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
| 19 |
29C010PM-2 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 20 |
29C010PM-3 |
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 21 |
29C010PM-3 |
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM |
Turbo IC |
| 22 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 23 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 24 |
BCR10PM |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 25 |
BCR10PM-12 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 26 |
BCR10PM-12L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 27 |
BCR10PM-8 |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 28 |
BCR10PM-8L |
Isolated Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 29 |
IRG5K10PM06Z |
600V 10A Fast IGBT CIB module packaged in EZIRPACK 1 package |
International Rectifier |
| 30 |
IRG7T10PM12E |
1200V 10A Ultra Fast IGBT CIB module packaged in POWIR ECO 2 package |
International Rectifier |
| | | |
