| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ100 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5FMCJ200A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 190V(min), 210V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5KA10 |
Automotive Transient Voltage Suppressors Breakdown Voltage 10V, Peak Pulse Power 1500W |
Vishay |
| 4 |
1.5KA10A |
Automotive Transient Voltage Suppressors Breakdown Voltage 10V, Peak Pulse Power 1500W |
Vishay |
| 5 |
1.5KE100 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 6 |
1.5KE110CARL4 |
1500 Watt mosorb zener transient voltage suppressors, 110V |
ON Semiconductor |
| 7 |
1.5KE200A |
190- 210V transient voltage suppressor |
DC Components |
| 8 |
1.5KE200A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 190V(min), 210V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 9 |
1.5KE220A |
190- 210V transient voltage suppressor |
DC Components |
| 10 |
1.5SMC110 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 110V. 1500W peak power, 5.0W steady state. |
Motorola |
| 11 |
1.5SMC110A |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 110V. 1500W peak power, 5.0W steady state. |
Motorola |
| 12 |
1.5SMCJ110 |
1500W voltage supressor, 110V |
MEI |
| 13 |
1.5SMCJ110A |
1500W voltage supressor, 110V |
MEI |
| 14 |
1.5SMCJ110C |
1500W voltage supressor, 110V |
MEI |
| 15 |
1.5SMCJ110CA |
1500W voltage supressor, 110V |
MEI |
| 16 |
1/4M10Z |
Zener Diode 1/4W 10V |
Motorola |
| 17 |
1/4M110Z |
Zener Diode 1/4W 110V |
Motorola |
| 18 |
10DZ10 |
Voltage Regulator Diode of 10W 10V |
IPRS Baneasa |
| 19 |
10DZ10 |
10W 10V Zener Diode |
IPRS Baneasa |
| 20 |
1214-110V |
Pulsed Power L-Band (Si) |
Microsemi |
| 21 |
15042-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 110VDC |
NTE Electronics |
| 22 |
15KP110 |
110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 23 |
15KP110 |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 24 |
15KP110A |
110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 25 |
15KP110A |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 26 |
15KP110C |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 27 |
15KP110CA |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 28 |
15KPA110 |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 29 |
15KPA110A |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 30 |
15KPA110C |
Diode TVS Single Bi-Dir 110V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
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