| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1504-220G |
Delay 220 +/-11 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 2 |
1G-111 |
TRANSITRON 1G111 OUTLINE |
Transitron Electronic |
| 3 |
1N4111 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 4 |
1N4111 (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 5 |
1N4711 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 6 |
1N4741 |
11 V, 1 W silicon zener diode |
BKC International Electronics |
| 7 |
1N4741 |
1 WATT, 11 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 8 |
1N4741A |
11 V, 1 W silicon zener diode |
BKC International Electronics |
| 9 |
1N4741A |
Voltage regulator diode. Working voltage (nom) 11 V . |
Philips |
| 10 |
1N4741A |
11 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 11 |
1N5241 |
500mW, 11 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 12 |
1N5241A |
11 V, 20 mA, zener diode |
Leshan Radio Company |
| 13 |
1N5241AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 11 V. Tolerance +-10%. |
Microsemi |
| 14 |
1N5241BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 11 V. Tolerance +-5%. |
Microsemi |
| 15 |
1N5241C |
11 V, 20 mA, zener diode |
Leshan Radio Company |
| 16 |
1N5241D |
11 V, 20 mA, zener diode |
Leshan Radio Company |
| 17 |
1N5241UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 11 V. |
Microsemi |
| 18 |
1N5348 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 19 |
1N5348B |
11 V, 125 mA, 5 W glass passivated zener diode |
Fagor |
| 20 |
1N5348B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 21 |
1N5348B |
11 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 22 |
1N5349B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 23 |
1N5350B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 24 |
1N5351B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 25 |
1N5352B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 26 |
1N5353B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 27 |
1N5354B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 28 |
1N5355B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 29 |
1N5356B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 30 |
1N5357B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| | | |
