| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4741 |
11 V, 1 W silicon zener diode |
BKC International Electronics |
| 2 |
1N4741 |
1 WATT, 11 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 3 |
1N4741A |
11 V, 1 W silicon zener diode |
BKC International Electronics |
| 4 |
1N4741A |
Voltage regulator diode. Working voltage (nom) 11 V . |
Philips |
| 5 |
1N4741A |
11 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 6 |
1N5241 |
500mW, 11 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 7 |
1N5241A |
11 V, 20 mA, zener diode |
Leshan Radio Company |
| 8 |
1N5241AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 11 V. Tolerance +-10%. |
Microsemi |
| 9 |
1N5241BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 11 V. Tolerance +-5%. |
Microsemi |
| 10 |
1N5241C |
11 V, 20 mA, zener diode |
Leshan Radio Company |
| 11 |
1N5241D |
11 V, 20 mA, zener diode |
Leshan Radio Company |
| 12 |
1N5241UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 11 V. |
Microsemi |
| 13 |
1N5348B |
11 V, 125 mA, 5 W glass passivated zener diode |
Fagor |
| 14 |
1N5348B |
11 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 15 |
1N5926B |
11 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 16 |
1N6272 |
11 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 17 |
1N6272A |
11 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 18 |
1N6272C |
11 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 19 |
1N6272CA |
11 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 20 |
1N962 |
400mW, 11 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 21 |
1N962A |
11 V, 11.5 mA, silicon planar zener diode |
Honey Technology |
| 22 |
1N962A |
11 V, zener diode |
Leshan Radio Company |
| 23 |
1N962B |
11 V, 11.5 mA, silicon planar zener diode |
Honey Technology |
| 24 |
1N962B-1 |
11 V, 400 mW silicon zener diode |
BKC International Electronics |
| 25 |
1SMA4741 |
11 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 26 |
1SMB5926 |
11 V, 1.5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 27 |
1SMB5926A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 11 V. +-10% tolerance. |
Motorola |
| 28 |
1SMB5926B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 11 V. +-5% tolerance. |
Motorola |
| 29 |
1SMC5348 |
11 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 30 |
5KP100 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
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