| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP150 |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
| 2 |
15KP150C |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
| 3 |
1N962A |
11 V, 11.5 mA, silicon planar zener diode |
Honey Technology |
| 4 |
1N962B |
11 V, 11.5 mA, silicon planar zener diode |
Honey Technology |
| 5 |
BUK9K12-60E |
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET |
Nexperia |
| 6 |
BUK9K12-60E |
Dual N-channel 60 V, 11.5 mΩ logic level MOSFET |
NXP Semiconductors |
| 7 |
CFY30 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 8 |
CND2050 |
0.5-11.5 GHz Divide by 4 Static Prescaler |
United Monolithic Semiconductors |
| 9 |
CND2050-DAF/20 |
0.5-11.5 GHz Divide by 4 Static Prescaler |
United Monolithic Semiconductors |
| 10 |
FR1010EPL |
11.5 mA, spectra-band photocell |
Texas Instruments |
| 11 |
MMDF3200Z |
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS |
Motorola |
| 12 |
MMSF3300-D |
Power MOSFET 11.5 Amps, 30 Volts N-Channel SO-8 |
ON Semiconductor |
| 13 |
NTTFS5820NL |
Power MOSFET, 60 V, 37 A, 11.5 mΩ |
ON Semiconductor |
| 14 |
NVTFS5820NL |
Power MOSFET, 60 V, 11.5 mΩ, Single N-Channel |
ON Semiconductor |
| 15 |
Q62703-F97 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
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