| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE100 |
90.0- 110.0V transient voltage suppressor |
DC Components |
| 2 |
15KW110 |
110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3 |
15KW110A |
110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 4 |
1N4187B |
110.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 5 |
5KP110 |
110.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 6 |
5KP110A |
110.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 7 |
BZX55C110 |
110.0V Low Current 500 mW Zener Diode |
Continental Device India Limited |
| 8 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 11 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 12 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 13 |
MAX40-110.0C |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 14 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 15 |
MAX40-110.0CA |
110.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 16 |
MHW7242 |
24 dB GAIN 750 MHz 110.CHANNEL CATV AMPLIFIER |
Motorola |
| 17 |
MHW7272 |
27 dB GAIN 750 MHz 110.CHANNEL CATV AMPLIFIER |
Motorola |
| 18 |
MHW7292 |
29 dB GAIN 750 MHz 110.CHANNEL CATV AMPLIFIER |
Motorola |
| 19 |
NTE5287AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 110.0V. Zener test current Izt = 110mA. |
NTE Electronics |
| 20 |
P4SMAJ110-T1 |
Reverse stand-off voltage: 110.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 21 |
P4SMAJ110-T3 |
Reverse stand-off voltage: 110.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 22 |
P4SMAJ110A-T1 |
Reverse stand-off voltage: 110.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 23 |
P4SMAJ110A-T3 |
Reverse stand-off voltage: 110.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 24 |
P4SMAJ110C-T1 |
Reverse stand-off voltage: 110.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 25 |
P4SMAJ110C-T3 |
Reverse stand-off voltage: 110.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 26 |
P4SMAJ110CA-T1 |
Reverse stand-off voltage: 110.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 27 |
P4SMAJ110CA-T3 |
Reverse stand-off voltage: 110.00V surface mount transient voltage suppressor |
Won-Top Electronics |
| 28 |
SA110 |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 29 |
SA110A |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 30 |
SA110C |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 110.00 V. Test current IT = 1 mA. |
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